相关论文: Phosphorus donors in highly strained silicon
We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a…
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by…
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P…
Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is important for fundamental studies of material properties as well as for quantum information processing with electron, hole, and nuclear-spin states.…
Improving the accuracy and thus broadening the applicability of electronic density functional theory (DFT) is crucial to many research areas, from material science, to theoretical chemistry, biophysics and biochemistry. In the last three…
This work reports the measurement of electron $g$ factor anisotropy ($| \Delta g |$ = $| g_{001} - g_{1 \bar 1 0} |$) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}$Ge$_x$) environments. Multi-million-atom…
We apply the coupled dynamics of time-dependent density functional theory and Maxwell equations to the interaction of intense laser pulses with crystalline silicon. As a function of electromagnetic field intensity, we see several regions in…
Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier…
Excitations of impurity complexes in semiconductors can not only provide a route to fill the terahertz gap in optical technologies, but can also connect local quantum bits to scale up solid-state quantum-computing devices. However, taking…
We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the $^{31}$P spins in low-doped (N$_D =6\times10^{15}$ cm$^{-3}$) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal.…
Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…
We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters…
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial…
Intense "blue-green" phosphorescence is commonly observed in near colourless lab-grown high-pressure high-temperature (HPHT) diamonds following optical excitation at or above the indirect bandgap. We have employed a holistic combination of…
We investigate the coupling of an ensemble of phosphorus donors in an isotopically purified $^{28}$Si host lattice interacting with a superconducting coplanar waveguide resonator. The microwave transmission spectrum of the resonator shows a…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
We investigate hyperfine interaction (HFI) using density-functional theory for several open-shell planar $sp^2$-carbon nanostructures displaying $\pi$ magnetism. Our prototype structures include both benzenoid ([$n$]triangulenes and a…
The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…
Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary…