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相关论文: Novel Phase Between Band and Mott Insulators in Tw…

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Quantum systems under electric fields provide a powerful framework for uncovering and controlling novel quantum phases, especially in low-dimensional systems with strong correlations. In this work, we investigate quantum phase transitions…

强关联电子 · 物理学 2025-05-22 D. Arisa , R. M. Dos Santos , Isaac M. Carvalho , Vivian V. França

The ground-state properties of the two-dimensional Hubbard model with nearest-neighbor and next-nearest-neighbor hoppings at half filling are studied by the path-integral-renormalization-group method. The nonmagnetic-insulator phase…

强关联电子 · 物理学 2007-05-23 Shinji Watanabe , Masatoshi Imada

We investigate the half-filled Hubbard model with spatially alternating interactions by means of the two-site dynamical mean-field theory. It is found that a single Mott transition occurs when two kinds of interactions are increased. This…

强关联电子 · 物理学 2012-04-20 Takamitsu Saitou , Akihisa Koga , Atsushi Yamamoto

We consider a modification of the one-dimensional Hubbard model by including an external pairing potential. Guided by analytic bosonization results, we quantitatively determine the grand-canonical zero-temperature phase diagram using both…

强关联电子 · 物理学 2021-01-20 Myung-Hoon Chung , Edmond Orignac , Didier Poilblanc , Sylvain Capponi

We present a large-scale combinatorial-diagrammatic computation of high-order contributions to the strong-coupling Kato-Takahashi perturbation series for the Hubbard model in high dimensions. The ground-state energy of the Mott-insulating…

强关联电子 · 物理学 2014-12-31 Martin Paech , Walter Apel , Eva Kalinowski , Eric Jeckelmann

We study the zero-temperature phase diagram of the half-filled one-dimensional ionic Hubbard model. This model is governed by the interplay of the on-site Coulomb repulsion and an alternating one-particle potential. Various many-body energy…

强关联电子 · 物理学 2009-11-10 S. R. Manmana , V. Meden , R. M. Noack , K. Schoenhammer

We present well-controlled results on the metal to insulator transition (MIT) within the paramagnetic solution of the dynamical cluster approximation (DCA) in the two-dimensional Hubbard model at half-filling. In the strong coupling regime,…

强关联电子 · 物理学 2009-10-31 S. Moukouri , M. Jarrell

Around a metal-to-insulator transition driven by repulsive interaction (Mott transition) the single particle excitations and the collective excitations are equally important. Here we present results for the generic susceptibilities at zero…

强关联电子 · 物理学 2009-04-03 Carsten Raas , Götz S. Uhrig

The Mott-Hubbard metal-insulator transition is studied within a simplified version of the Dynamical Mean-Field Theory (DMFT) in which the coupling between the impurity level and the conduction band is approximated by a single pole at the…

强关联电子 · 物理学 2009-10-31 R. Bulla , M. Potthoff

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

We use the density-matrix renormalization group method to investigate ground-state and dynamic properties of the one-dimensional Bose-Hubbard model, the effective model of ultracold bosonic atoms in an optical lattice. For fixed maximum…

强关联电子 · 物理学 2015-05-27 S. Ejima , H. Fehske , F. Gebhard

Recent advances in the field of quantum Monte Carlo simulations for impurity problems allow --within dynamical mean field theory-- for a more thorough investigation of the two-band Hubbard model with narrow/wide band and SU(2)-symmetric…

统计力学 · 物理学 2007-05-23 R. Arita , K. Held

A three band model containing the essential physics of transition metal oxides with partially filled t_2g shells is solved in the single-site dynamical mean field approximation, using the full rotationally invariant Slater-Kanamori…

强关联电子 · 物理学 2009-03-30 Philipp Werner , Emanuel Gull , Andrew J. Millis

We consider the fermionic SU($3$) Hubbard model on the triangular lattice in the presence of a three-sublattice staggered potential which provides the possibility to investigate the competition of charge and magnetic order in…

强关联电子 · 物理学 2019-07-31 Mohsen Hafez-Torbati , Walter Hofstetter

We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…

强关联电子 · 物理学 2012-06-26 Amal Medhi , Vijay B. Shenoy , H. R. Krishnamurthy

We investigate the magnetic and conduction properties of Kane-Mele Hubbard model in quasi one-dimensional honeycomb ribbon systems at half-filling by varying the strength of both spin-orbit interaction and on-site Coulomb correlation term.…

强关联电子 · 物理学 2024-08-29 Ranadeep Roy , Sasmita Mohakud , Katsunori Wakabayashi , Sudipta Dutta

We present an resonating valence bond (RVB) theory of superconductivity for the Hubbard--Heisenberg model on an anisotropic triangular lattice. We show that these calculations are consistent with the observed phase diagram of the…

超导电性 · 物理学 2007-05-23 B. J. Powell , Ross H. McKenzie

We investigate the two-dimensional Hubbard model on the triangular lattice with anisotropic hopping integrals at half filling. By means of a self-energy functional approach, we discuss how stable the non-magnetic state is against…

强关联电子 · 物理学 2009-11-13 K. Inaba , A. Koga , S. Suga , N. Kawakami

The ground state phase diagram of the 1D Hubbard chain with pair-hopping interaction is studied. The analysis of the model is performed using the continuum-limit field theory approach and exact diagonalization studies. At half-filling the…

强关联电子 · 物理学 2009-10-31 G. I. Japaridze , A. P. Kampf , M. Sekania , P. Kakashvili , Ph. Brune

We study the electronic spectral properties at zero temperature of the one-dimensional (1D) version of the degenerate two-orbital Kanamori Hubbard model (KHM), one of the well established frameworks to study transition metal compounds,…

强关联电子 · 物理学 2022-03-04 N. Aucar Boidi , H. Fernández García , Y. Núñez-Fernández , K. Hallberg