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相关论文: Metallic interface at the boundary between band an…

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We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moir\'e engineering is yet…

Motivated from the experimental observation of metal induced gap states (MIGS) at insulator/metal interfaces by Kiguchi {\it et al.} [Phys. Rev. Lett. {\bf 90}, 196803 (2003)], we have theoretically investigated the electronic properties of…

材料科学 · 物理学 2009-11-10 Ryotaro Arita , Yoshiaki Tanida , Kazuhiko Kuroki , Hideo Aoki

The complexity of quantum many-body systems originates from the interplay of strong interactions, quantum statistics, and the large number of quantum-mechanical degrees of freedom. Probing these systems on a microscopic level with…

Recently, the field of strongly correlated electrons has begun an intense search for a correlation induced topological insulating phase. An example is the quadratic band touching point which arises in a checkerboard lattice at half-filling,…

强关联电子 · 物理学 2019-03-28 I. Mandal , S. Gemsheim

We use density functional theory calculations to show that the LaAlO3|SrTiO3 interface between insulating perovskite oxides is borderline in satisfying the Stoner criterion for itinerant ferromagnetism and explore other oxide combinations…

材料科学 · 物理学 2014-09-17 Nirmal Ganguli , Paul J. Kelly

Light-manipulation of correlated electronic phases in solids offers the tantalizing prospect of realizing electronic devices operating at the ultrafast time-scale. In this context, the experimental realization of non-equilibrium transitions…

强关联电子 · 物理学 2021-04-09 Francesco Grandi , Martin Eckstein

We study the decay of interface induced structural and electronic relaxation effects in epitaxial LaAlO3/SrTiO3 heterostructures. The results are based on first-principles band structure calculations for a multilayer configuration with an…

材料科学 · 物理学 2009-11-13 U. Schwingenschloegl , C. Schuster

Employing extensive cellular dynamical mean-field theory (CDMFT) calculations with exact diagonalization impurity solver, we investigate the ground state phase diagrams and non-magnetic metal-insulator transitions of the half-filled Hubbard…

强关联电子 · 物理学 2015-03-20 Han-Qing Wu , Rong-Qiang He , Zi Yang Meng , Zhong-Yi Lu

We theoretically investigate the heterostructure between a ferrimagnetic Mott insulator and a time-reversal invariant topological band insulator on the two-dimensional Lieb lattice with periodic boundary conditions. Our Hartree-Fock and…

介观与纳米尺度物理 · 物理学 2025-11-11 Rahul Ghosh , Subhajyoti Pal , Kush Saha , Anamitra Mukherjee

The oxide interface SrTiO3/LaAlO3 supports a 2D electron liquid displaying superconductivity and magnetism, while allowing for a continuous control of the electron density using a gate. Our recent measurements have shown a similar…

强关联电子 · 物理学 2017-02-22 Eran Maniv , Yoram Dagan , Moshe Goldstein

LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced…

We develop a simple model to compute the energy-dependent decay factors of metal-induced gap states in metal/insulator interfaces considering the collective behaviour of all the bulk complex bands in the gap of the insulator. The agreement…

材料科学 · 物理学 2014-01-13 Pablo Aguado-Puente , Javier Junquera

Motivated by the recent experiments on van der Waals heterostructures involving metallic and Mott insulating layers, we construct a moir\'e extension of the Kondo-Heisenberg model and study its phase diagram via Abrikosov fermion mean field…

强关联电子 · 物理学 2024-08-13 Jyotirish Das , Onur Erten

The structural, magnetic, and electronic properties of (STO)$_4$/(YTO)$_2$ superlattice consisting of Mott insulator YTiO$_3$ (YTO) and band insulator SrTiO$_3$ (STO) under strain are investigated by the density-functional-theory plus…

介观与纳米尺度物理 · 物理学 2017-10-10 Xue-Jing Zhang , Peng Chen , Bang-Gui Liu

Interface engineering is an extremely useful tool for systematically investigating materials and the various ways materials interact with each other. We describe different interface engineering strategies designed to reveal the origin of…

材料科学 · 物理学 2016-09-19 Hans Boschker , Zhaoliang Liao , Mark Huijben , Gertjan Koster , Guus Rijnders

The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the Jeff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we…

In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…

其他凝聚态物理 · 物理学 2010-01-21 Robert Jördens , Niels Strohmaier , Kenneth Günter , Henning Moritz , Tilman Esslinger

The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller…

The interface superconductivity in LaAlO$_{3}$-SrTiO$_{3}$ heterostructures reveals a non-monotonic behavior of the critical temperature as a function of the two-dimensional density of charge carriers. We develop a theoretical description…

超导电性 · 物理学 2014-07-22 S. N. Klimin , J. Tempere , J. T. Devreese , D. van der Marel