相关论文: Generating Spin Currents in Semiconductors with th…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
A new kind of charge-Hall effect is shown. Unlike in the usual Hall effect, the driving force in the longitudinal direction is a spin force, which may originate from the gradient of a Zeeman field or a spin-dependent chemical potential. The…
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current.…
The generation of spin current and spin polarization in a 2DEG structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of…
Injection of unpolarized charge current through the longitudinal leads of a four-terminal two-dimensional electron gas with the Rashba spin-orbit (SO) coupling and/or SO scattering off extrinsic impurities is responsible not only for the…
The spin-galvanic (inverse Edelstein) and inverse spin-Hall effects are calculated for a hybrid system that combines thin superconductor and Rashba-metal layers. These effects are produced by a nonequilibrium spin polarization which is…
A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive…
We study the edge spin current and spin polarization in a two-dimensional electron gas with spin-orbit coupling in the presence of a perpendicular magnetic field. The edge effect removes the degeneracy of Landau levels due to the…
The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state…
Using thin film pillars ~100 nm in diameter, containing two ferromagnetic Co layers of different thicknesses separated by a paramagnetic Cu spacer, we examine effects of torques due to spin-polarized currents flowing perpendicular to the…
The spin Seebeck effect refers to the generation of a spin voltage caused by a temperature gradient in a ferromagnet, which enables the thermal injection of spin currents from the ferromagnet into an attached nonmagnetic metal over a…
A generalized definition of intrinsic and extrinsic transport coefficients is introduced. We show that transport coefficients from the intrinsic origin are solely determined by local electronic structure, and thus the intrinsic spin Hall…
We propose a hole-induced mechanism of spin-polarized current generation by circularly polarized synchrotron radiation and corresponding induced magnetization in magnetically-doped topological insulators…
In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin…
Recent achievements in semiconductor spintronics are discussed. Special attention is paid to spin-orbit interaction, coupling of electron spins to external electric fields, and spin transport in media with spin-orbit coupling, including the…
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
The spin Hall effect is a phenomenon of inducing spin current by an external electric field. We recently proposed that this effect can occur in p-type semiconductors without relying upon any disorder scattering [S. Murakami et al., Science…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
We propose a tunneling spin Hall effect in a normal metal/$p$-wave magnet/superconductor junction. It is found that the Andreev reflection in the normal lead is spin-dependent and exhibits strong asymmetry with respect to the transverse…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…