相关论文: Fano interference effect on the transition spectru…
By breaking the symmetrical arrangement of double micro-ring resonator, the formation mechanism and performance of reflection and transmission spectrum and optical field distribution are investigated. The reflection spectrum is Fano shape.…
We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…
We investigate the electronic transport behavior of Fano-Anderson (FA) systems, consisting of a one-dimensional finite backbone chain and an attached side-group of varying length. The tight-binding model within the non-equilibrium Green's…
We calculate the conductance through strongly correlated T-shaped molecular or quantum dot systems under the influence of phonons. The system is modelled by the extended Anderson-Holstein Hamiltonian. The finite-U mean-field slave boson…
The coupling between molecular exciton and gap plasmons plays a key role in single molecular electroluminescence induced by a scanning tunneling microscope (STM). But it has been difficult to clarify the complex experimental phenomena. By…
We study the self interference effect of a resonator coupled with a bent waveguide at two separated ports. Such interference effects are shown to be similar for the cases of standing-wave and traveling-wave resonators, while in the system…
Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene…
We show that external control of Fano resonances in general leads to complex Fano $q$-parameters. Fano line shapes of photo-electron and transient absorption spectra in presence of an infrared control field are investigated. Computed…
The shot noise of spin polarized electrons is shown to be generically dependent upon spin-flip processes. Such a situation represents perhaps the simplest instance where the two-particle character of current fluctuations out of equilibrium…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We analyze the optically induced Kondo effect in the absorption spectrum for a quantum dot with an even number of electrons, for which the Kondo effect does not occur in the ground state. The Kondo exchange couplings generated for…
We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model…
We discuss the thermoelectric properties assisted by the Fano effect of a parallel double quantum dot (QD) structure. By adjusting the couplings between the QDs and leads, we facilitate the nonresonant and resonant channels for the Fano…
Conductance through a system consisting of a wire with side-attached quantum dots is calculated. Such geometry of the device allows to study the coexistence of quantum interference, electron correlations and their influence on conductance.…
The zero-temperature magnetic field-dependent conductance of electrons through a one-dimensional non-interacting tight-binding chain with an interacting {\it side} dot is reviewed and analized further. When the number of electrons in the…
We investigate coherent single-photon transport in a waveguide-QED structure containing two giant atoms. The unified analytical expressions of the single-photon scattering amplitudes applicable for different topological configurations are…
Spin-polarized transport through a quantum dot strongly coupled to ferromagnetic electrodes with non-collinear magnetic moments is analyzed theoretically in terms of the non-equilibrium Green function formalism. Electrons in the dot are…
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes…
We investigate the electron transport through a mesoscopic ring side-coupled with a quantum dot(QD) in the presence of Rashba spin-orbit(SO) interaction. It is shown that both the Fano resonance and the spin interference effects play…
Interference effects strongly affect the transport characteristics of a benzene single-electron transistor (SET) and for this reason we call it interference SET (I-SET). We focus on the effects of degeneracies between many-body states of…