相关论文: Reduction of threshold current density for current…

A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…

Many future concepts for spintronic devices are based on the current-driven motion of magnetic domain walls through nanowires. Consequently a thorough understanding of the domain wall mobility is required. However, the magnitude of the…

The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet…

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in…

Transmission probability of a domain wall through a magnetic nanowire is investigated as a function of the external magnetic field. Very intriguing phenomenon is found that the transmission probability shows a significant drop after…

We theoretically study the current-induced dynamics of a domain wall in a ferromagnetic nanotube by developing a theory for the orbital angular momentum of a domain wall and the current-induced torque on it. Specifically, a domain wall with…

We consider the dynamics of polarization of a single domain wall in a magnetic nanowire, which is strongly pinned by impurities. In this case the equation of motion for the polarization parameter does not include any other dynamical…

Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably,…

Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current…

The current mediated domain-wall dynamics in a thin ferromagnetic wire is investigated. We derive the effective equations of motion of the domain wall. They are used to study the possibility to optimize the power supplied by electric…

Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor)…

Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices such as memristors and…

A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…

Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which…

Dynamics of magnetization domain walls (DWs) in thin ferromagnetic nanotubes subject to longitudinal external fields is addressed analytically in the regimes of strong and weak penalization. Explicit functional forms of the DW profiles and…

The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta)…

Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the…

The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of…

Using soft x-ray spectromicroscopy, we investigate the magnetic domain structure in embedded nanomagnets defined in La$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films and LaFeO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ bilayers. We find that shape-controlled…

We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic…