相关论文: Photoconduction in Alq3
This paper presents a study of dc photocurrents in biased insulators to the third order in the electric field. We find three photocurrents which are characterized by physical divergences of the third-order free-electron polarization…
Bulk photovoltaic effect, which arises from crystal symmetry-driven charge carrier separation, is an intriguing physical phenomenon that has attracted extensive interest in photovoltaic application due to its junction-free photovoltaic and…
The energetic landscape of charge transfer (CT) states at the interface of electron donating and electron accepting domains in organic optoelectronic devices is crucial for their performance. Central questions -- such as the role of static…
The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past…
Photon impingement is capable of liberating electrons in electronic devices and driving the electron flux from the lower chemical potential to higher chemical potential. Previous studies hinted that the thermodynamic efficiency of a…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
This paper contains a detailed derivation of the photoinduced current density at third order in the coupling between a semiconductor and a multifrequency photon field, starting from its standard textbook expression as a third order time…
Photofragment translational spectroscopy has been used to characterize the photodissociation of CH$_3$I and CF$_3$I adsorbed on thin films of a variety of aromatic molecules, initiated by near-UV light. Thin films (nominally 10 monolayers)…
The bulk photovoltaic effect (BPE) leads to the generation of a photocurrent from an asymmetric material. Despite drawing much attention due to its ability to generate photovoltages above the band gap ($E_g$), it is considered a weak effect…
Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in…
Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of…
The inclusive production of prompt photons with energy above 10 GeV is measured using the OPAL detector in hadronic Z^0 decays at LEP. In contrast to previous measurements, the prompt photons were not required to be isolated. The production…
We performed optical-pump terahertz-probe measurements of a Mott insulator YTiO$_{3}$ and a band semiconductor Si using a laser diode (1.47 eV) and a femtosecond pulse laser (1.55 eV). Both samples possess long energy-relaxation times (1.5…
Charge separation properties, that is the ability of a chromophore, or a chromophore/semiconductor interface, to separate charges upon light absorption, are crucial characteristics for an efficient photovoltaic device. Starting from this…
A repeated interaction process assisted by auxiliary thermal systems charges a quantum battery. The charging energy is supplied by switching on and off the interaction between the battery and the thermal systems. The charged state is an…
We present measurements of conductance hysteresis on CH3NH3PbI3 perovskite thin films, performed using the double-wave method, in order to investigate the possibility of a ferroelectric response. A strong frequency dependence of the…
The pseudorapidity densities of charged particles and inclusive photons produced in high energy nuclear collisions are essential observables to characterise the global properties of the collisions, such as the achieved energy density, and…
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…
Measurements of charge-carrier lifetime in many early-stage thin-film photovoltaic materials can be arduous due to the prevalence of defects and limited information about material properties. In this perspective, we give a brief overview of…
Photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of the open-circuit voltage that is much larger than the bandgap, making it rather attractive in solar cells. However, the magnitude of the PGE…