相关论文: Conductivity of a spin-polarized two-dimensional e…
The effect of disorder on a class of transition metal oxides described by a single orbital Hubbard model at half filling is investigated. The phases are characterized by the nature of the electronic and spin excitations. The frequency and…
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic…
We theoretically study the electrical conductivity in a one-dimensional helimagnet whose spin texture changes from helimagnetic to conical magnetic, and to forced ferromagnetic state while increasing the magnetic field along the helical…
We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
We consider the finkelstein action describing a system of spin polarized or spinless electrons near two dimensions, in the presence of disorder as well as the Coulomb interactions.We extend the renormalization group analysis of our previous…
The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in…
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
Universal properties of spin-Hall effect in ballistic 2D electron systems are addressed. The net spin polarization across the edge of the conductor is second order, ~\lambda^2, in spin-orbit coupling constant independent of the form of the…
The experimentally observed amazing dependence of a critical magnetic field Bc of a full field-induced spin polarization and a spin susceptibility of a two-dimensional electron gas on the electron density can be explained by screening of…
We find that the temperature dependence of the drag resistivity ($\rho_{D}$) between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Near the apparent metal-insulator transition, the…
We establish the consistency of the Fermi liquid description and find a relation between Fermi liquid constants for the two dimensional electron system near the point of full polarization due to a parallel magnetic field $H$. Our results…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the…
In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…
An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin, which offer potential…
The spin degree of freedom can play an essential role in determining the electrical transport properties of spin-polarized electron systems in metals or semiconductors. In this article, I address the dependence of spin-subsystem chemical…
Transport in an ideal two-dimensional quantum spin Hall device is dominated by the counterpropagating edge states of electrons with opposite spins, giving the universal value of the conductance, $2e^2/h$. We study the effect on the…