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The recent development of all-electrical electron spin resonance (ESR) in a scanning tunneling microscope (STM) setup has opened the door to vast applications. Despite the fast growing number of experimental works on STM-ESR, the…

We consider electromechanical properties of a single-electronic device consisting of movable quantum dot attached to a vibrating cantilever, forming a tunnel contact with a non-movable source electrode. We show that the resonance Kondo…

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…

We investigate real-time dynamics of spin-polarized current in a quantum dot coupled to ferromagnetic leads in both parallel and antiparallel alignments. While an external bias voltage is taken constant in time, a gate terminal,…

Exploring the electron tunneling mechanisms in diverse materials systems constitutes a versatile strategy for tailoring the properties of optoelectronic devices. In this domain, bipolar vertical tunneling junctions composed of van der Waals…

Ultracold molecules provide opportunities for exploring quantum matter, chemical dynamics and information processing thanks to their rich interactions, which can be controlled by external fields. Magnetic fields tune interactions through…

We theoretically investigate the absorption and emission of light carrying orbital angular momentum (twisted-light) by quasi-two-dimensional (disc-shaped) quantum dots in the presence of a static magnetic field. We calculate the transition…

We show that, in a magnetic field parallel to the 2D electron layer, strong electron correlations change the rate of tunneling from the layer exponentially. It results in a specific density dependence of the escape rate. The mechanism is a…

Electromagnetically induced transparency (EIT) is a well-known phenomenon due in part to its applicability to quantum devices such as quantum memories and quantum gates. EIT is commonly modeled with a three-level lambda system due to the…

Optical gain is a critical process in today's semiconductor technology and it is most often achieved via stimulated emission. In this theoretical study, we find a resonant TE mode in biased low-symmetry two-dimensional metallic systems…

We consider the effects of electron-hole interaction, 2D confinement and applied electric field on direct allowed transitions in III-V semiconductors, with InGaAs as a study case. Instead of Coulomb interaction, we use Gaussian potential.…

A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the…

This paper intends to realize negative refraction with absorption suppressed by the electromagneticly induced transparency(EIT) in a dense four-level atomic system. Without the two equal transition frequencies responding to the probe field,…

The high density of evanescent modes in the vicinity of a metal leads to enhancement of the near-field F\"{o}rster resonant energy transfer (FRET) rate. We present a classical approach to calculate the FRET rate based on the dyadic Green's…

Incorporating time-varying elements into electromagnetic systems has shown to be a powerful approach to challenge well-established performance limits, for example bounds on absorption and impedance matching. So far, the majority of these…

We study the light absorption and energy transferring in a donor-acceptor system with a bionic structure. In the optimal case with uniform couplings, it is found that the quantum dynamics of this seemingly complicated system is reduced as a…

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices.…

We study the electromagnetically induced transparency (EIT) effect with two individually addressed four-level Rydberg atoms subjected to the interatomic van der Waals interaction. We derive an effectively atomic Raman transition model where…

Terahertz bands enable ultra-broadband wireless communications but require compact, low-cost, and efficient transceiver modules. Conventional implementations based on metallic waveguides or silicon lenses suffer from high loss, bulkiness,…

Vacuum nanodevices are devices that the electron transport through them is based on electron field emission from a nano-eimtter to another opposite electrode through a vacuum channel. Geometrically asymmetric metal-vacuum-metal structures…