相关论文: Design of quasi-lateral p-n junction for optical s…
We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a…
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility…
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron…
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
A quasi-two-dimensional (Q2D) electron liquid (EL) is formed at the interface of a semiconductor heterojunction. For an accurate characterization of the Q2D EL, many-body effects need to be taken into account beyond the random phase…
The formation of novel two-dimensional electron gas (2DEG) with high mobility in metal/amorphous interfaces has motivated an ongoing debate regarding the formation and novel characteristics of these 2DEGs. Here we report an optical study,…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
Tunable magnetic interactions in high-mobility nonmagnetic semiconductor heterostructures are centrally important to spin-based quantum technologies. Conventionally, this requires incorporation of "magnetic impurities" within the…
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme,…
The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional…
Quasicrystals have a higher degree of rotational and point-reflection symmetry than conventional crystals. As a result, quasicrystalline heterostructures fabricated from dielectric materials with micrometer-scale features exhibit…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…