相关论文: Two-phonon infrared processes in semiconductors

With a study of bulk GaAs and GaP, we report detailed infrared spectra and their temperature dependence from first principles. Fine features and low-temperature trends in the predicted response are confirmed by experiment. The spectra are…

Contrary to a broadly accepted assumption we show that random (Ga,In)P is not an exception with respect to the crude classification of the phonon mode behavior of random mixed crystals in terms of 1-bond->1-mode systems or 2-bond->1-mode…

For direct detection of sub-MeV dark matter, a promising strategy is to search for individual phonon excitations in a crystal. We perform an analytic calculation of the rate for light dark matter (keV $<m_{DM}<$ MeV) to produce two acoustic…

We study plasmonic resonances in electrostatically gated graphene nanoribbons on silicon dioxide substrates. Absorption spectra are measured in the mid-far infrared and reveal multiple peaks, with width-dependent resonant frequencies. We…

High-field charge transport in semiconductors is of fundamental interest and practical importance. While the \textit{ab initio} treatment of low-field transport is well-developed, the treatment of high-field transport is much less so,…

We measured the Raman and the Infrared phonon spectrum of SmFeAsO polycrystalline samples. We also performed Density Functional Theory calculations within the pseudopotential approximation to obtain the structural and dynamical lattice…

A short review of the optical and far-infrared measurements on MgB$_{2}$ is given. Multiband and multigap effects are analyzed by comparing optical properties with other experiments and {\em ab initio} calculations. The covered topics are:…

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra…

We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage…

We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are…

We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…

Two-phonon contributions to meV-resolved inelastic x-ray scattering spectra of MgB2 at 300K are identified, in good agreement, in both intensity and energy, with a harmonic calculation using the force constant matrix from ab-inito LDA…

This paper presents ab inition calculations of the surface phonon spectra of GeSe layered semiconductor compound, based on the Density Functional Perturbation Theory (DFPT). The surface has been imitated by a structure of periodically…

The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…

Though extensively studied since the emergence of zincblende cubic A(B,C) semiconductor alloys (zb-SCA) in the sixties, the phonon mode behavior of Ga(As,P) remains a subject of debate to this day. Recently Zollner and co-authors reported…

The infrared divergences of QCD scattering amplitudes can be derived from an anomalous dimension \Gamma, which is a matrix in color space and depends on the momenta and masses of the external partons. It has recently been shown that in…

We calculate the probabilities of two- and four-phonon Raman scattering in graphene and show how the relative intensities of the overtone peaks encode information about relative rates of different inelastic processes electrons are subject…

Electron-phonon (e-ph) interactions are usually treated in the lowest order of perturbation theory. Here we derive next-to-leading order e-ph interactions, and compute from first principles the associated two-phonon e-ph scattering rates.…

In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For…

Raman spectra obtained by the inelastic scattering of light by crystalline solids contain contributions from first-order vibrational processes (e.g. the emission or absorption of one phonon, a quantum of vibration) as well as higher-order…