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相关论文: Exotic Kondo effect from magnetic trimers

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The nature of superconductivity in heavy-fermion materials is a subject under intense debate, and controlling this many-body state is central for its eventual understanding. Here, we examine how proximity effects may change this phenomenon,…

The Kondo effect originates from the spin exchange scattering of itinerant electrons with a localized magnetic impurity. Here, we consider generalization of Weyl-type electrons with their spin locked on a spherical Fermi surface in an…

介观与纳米尺度物理 · 物理学 2025-12-19 Kinari Goto , Yusuke Nishida

We present a single crystal study of low temperature magnetism and transport in Sm$Tr_2$Al$_{20}$ ($Tr =$ Ti, V and Cr). Strong valence fluctuation is manifested as Kondo effects including a large Sommerfeld coefficient $\gamma$, a weak…

强关联电子 · 物理学 2015-05-30 Akito Sakai , Satoru Nakatsuji

Recently, Coulomb blockade physics was observed at room temperature in a carbon nanotube single-electron transistor (H. W. Ch. Postma, et. al., Science 293, 76 (2001)). In this work, we suggest that these devices may be promising for…

强关联电子 · 物理学 2007-05-23 Eugene H. Kim , German Sierra , C. Kallin

Strange metals appear in a wide range of correlated materials. Electronic localization-delocalization and the expected loss of quasiparticles characterize beyond-Landau metallic quantum critical points and the associated strange metals.…

强关联电子 · 物理学 2023-08-29 Chia-Chuan Liu , Silke Paschen , Qimiao Si

Our single crystal study reveals that PrTr2Al20 (Tr = Ti and V) provides the first examples of a cubic {\Gamma}3 nonmagnetic ground doublet system that shows the Kondo effect including a -ln T dependent resistivity. The {\Gamma}3…

强关联电子 · 物理学 2015-03-19 Akito Sakai , Satoru Nakatsuji

A wide range of strongly correlated electron systems exhibit strange metallicity, and they are increasingly recognized as in proximity to correlation-driven localization-delocalization transitions. A prototype setting arises in heavy…

强关联电子 · 物理学 2025-09-12 Yiming Wang , Lei Chen , Haoyu Hu , Ang Cai , Jianhui Dai , C. J. Bolech , Qimiao Si

The Kondo effect is a many-body phenomenon allowing insight into the electronic and atomistic structure of spin-polarized adsorbates on metal surfaces. Its chemical control is intriguing because it deepens such insight, but the underlying…

强关联电子 · 物理学 2019-05-01 Marc Philipp Bahlke , Peter Wahl , Lars Diekhöner , Carmen Herrmann

Impurity four- and six-level Kondo model, in which an ion is tunneling among four- and six-stable points and interacting with surrounding conduction electrons, are investigated by using the perturbative and numerical renormalization group…

强关联电子 · 物理学 2015-06-25 Kazumasa Hattori , Yosuke Hirayama , Kazumasa Miyake

We discuss a role of the localized $\pi$ orbital, which exists around the defect, on the defect-induced Kondo effect in graphene by a numerical renormalization group study. We find that the localized $\pi$ orbital assists this Kondo effect,…

强关联电子 · 物理学 2015-05-20 Taro Kanao , Hiroyasu Matsuura , Masao Ogata

This review article provides an overview of the physics of the two-channel Kondo impurity model as manifested in two-level systems in metals and certain actinide/lanthanide ions in metals. Basic models are presented, followed by a…

强关联电子 · 物理学 2009-09-25 D. L. Cox , A. Zawadowski

We study an exotic Kondo effect in a system consisting of two one-dimensional XX Heisenberg ferromagnetic spin $1/2$ chains (denoted by $\alpha = u, d$ for up and down chains) coupled to a quantum dot consisting of two localized spin $1/2$…

强关联电子 · 物理学 2024-08-09 Igor Kuzmenko , Tetyana Kuzmenko , Y. B. Band , Yshai Avishai

The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the…

强关联电子 · 物理学 2021-03-09 Xiaxin Ding , Jie Xing , Gang Li , Luis Balicas , Krzysztof Gofryk , Hai-Hu Wen

A diluted non-Kramers doublet system Y$_{1-x}$Pr$_x$Ir$_2$Zn$_{20}$ is a promising candidate for exhibiting single-site quadrupolar (two-channel) Kondo effect. We have measured temperature-dependent magnetization of a sample for $x$ = 0.028…

强关联电子 · 物理学 2025-03-17 Yu Yamane , Takahiro Onimaru , Yasuyuki Shimura , Suguru Tsuda , Kazunori Umeo , Toshiro Takabatake

We report results of low-temperature thermodynamic and transport measurements of Pb_{1-x}Tl_{x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a…

强关联电子 · 物理学 2009-11-10 Y. Matsushita , H. Bluhm , T. H. Geballe , I. R. Fisher

We show that Ce- and Yb-based Kondo-lattice ferromagnets order mainly along the magnetically hard direction of the ground state Kramers doublet determined by crystalline electric field (CEF). Here we argue that this peculiar phenomenon,…

Iron, cobalt and nickel are archetypal ferromagnetic metals. In bulk, electronic conduction in these materials takes place mainly through the $s$ and $p$ electrons, whereas the magnetic moments are mostly in the narrow $d$-electron bands,…

强关联电子 · 物理学 2009-06-18 M. R. Calvo , J. Fernández-Rossier , J. J. Palacios , D. Jacob , D. Natelson , C. Untiedt

The question of how localized electrons interact with delocalized electrons is central to many problems at the forefront of solid state physics. The simplest example is the Kondo phenomenon, which occurs when an impurity atom with an…

强关联电子 · 物理学 2009-10-30 D. Goldhaber-Gordon , Hadas Shtrikman , D. Mahalu , David Abusch-Magder , U. Meirav , M. A. Kastner

In non-Kramers Kondo systems with a quadrupolar degrees of freedom, an ordinary magnetic Kondo effect can compete with the quadrupolar Kondo effect. We discuss such competition keeping Pr$T_{2}$Zn$_{20}$ ($T$=Ir, Rh) and Pr$T_{2}$Al$_{20}$…

强关联电子 · 物理学 2016-06-22 Hiroaki Kusunose

While the properties of the Kondo model in equilibrium are very well understood, much less is known for Kondo systems out of equilibrium. We study the properties of a quantum dot in the Kondo regime, when a large bias voltage V and/or a…

强关联电子 · 物理学 2009-11-10 A. Rosch , J. Paaske , J. Kroha , P. Wölfle