相关论文: Universality and Critical Behavior at the Mott tra…
We investigate the effect of pressure on the electronic and magnetic states of CdV$_2$O$_4$ by using ab initio electronic structure calculations. The Coulomb correlation and spin-orbit coupling play important role in deciding the…
We study the strong correlation effects in the vicinity of the Mott metal-insulator transition using coupled clean or disordered Hubbard chains with a infinitely large coordinate number $D_{\perp}\to\infty$ in the direction perpendicular to…
We address the critical and universal aspects of counterion-condensation transition at a single charged cylinder in both two and three spatial dimensions using numerical and analytical methods. By introducing a novel Monte-Carlo sampling…
We discuss a scaling theory of the lattice response in the vicinity of a finite-temperature critical end point. The thermal expansivity is shown to be more singular than the specific heat such that the Gr\"uneisen ratio diverges as the…
Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…
We investigate the finite temperature charge density wave (CDW) transition of lattice Bose gases within optical cavities in the deep Mott-insulator limit. We find a new critical regime emerges at a temperature around one-half of the on-site…
For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is observed by inducing internal optical phonon-coupled holes…
The previously proposed approach for the microscopic description of the critical behavior of Morse liquids based on the cell fluid model is applied to the case where the parameters of the Morse interaction potential correspond to alkali…
The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and…
We study conductance fluctuations in a two-dimensional electron gas as a function of chemical potential (or gate voltage) from the strongly insulating to the metallic regime. Power spectra of the fluctuations decay with two distinct…
We investigate the finite temperature critical dynamics of three-dimensional superconductors in the charged regime, described by a transverse gauge field coupling to the superconducting order parameter. Assuming relaxational dynamics for…
Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and…
Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…
Based on the universal properties of a critical point in different systems and that the QCD phase transitions fall into the same universality classes as the 3-dimensional Ising, $O(2)$ or $O(4)$ spin models, the critical behavior of…
We discuss first order transitions for systems in the Ising universality class. The critical long distance physics near the endpoint of the critical line is explicitly connected to microscopic properties of a given system. Information about…
We present specific-heat measurements in the vicinity of the antiferromagnetic phase transition on single crystals of the alloy Yb(Rh_{1-x}Co_x)2Si2 for x<= 0.38. This study was motivated by the violation of critical universality in the…
We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…
The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the…
The universal curve for the crossover from ES to screened Mott hopping is used to explain a reported discrepancy between the hopping conductivity prefactors in the two regimes. The prefactor in the screened Mott hopping regime is shown to…
The main objective of this article is to study the nature of the Andrews critical point in the gas-liquid transition in a physical-vapor transport (PVT) system. A dynamical model, consistent with the van der Waals equation near the Andrews…