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We have carried out first-principles based DFT calculation on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depends…

材料科学 · 物理学 2013-10-07 Amrita Bhattacharya , Saswata Bhattacharya , G. P. Das

Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and…

材料科学 · 物理学 2011-06-03 J. Abad , C. Gonzalez , P. L. de Andres , E. Roman

We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\,…

Very thin (1.2-2.5nm) self-assembled organic dielectric monolayers have been integrated into organic thin-film diode to achieve electrical characteristics. These dielectrics are fabricated by self-assembling deposition, resulting in smooth,…

材料科学 · 物理学 2007-08-13 C. Trapes , V. Gadenne , L. Rouaï

Using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunnelling microscopy (STM) and high resolution photo-electron spectroscopy (HR-PES) techniques we have studied the annealing effect of one silicon…

材料科学 · 物理学 2013-03-20 B. Lalmi , C. Girardeaux , A. Portavoce , C. Ottaviani , B. Aufray , J. Bernardini

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that…

介观与纳米尺度物理 · 物理学 2015-05-25 Jiagui Feng , Sean Wagner , Pengpeng Zhang

The deposition of one silicon monolayer on the silver (111) substrate in the temperature range 150-300$^\circ$C, gives rise to a mix of (4$\times$4), ($2\sqrt{3}\times 2\sqrt{3}$)R30$^\circ$ and ($\sqrt{13}\times\sqrt{13}$)R13.9$^\circ$…

材料科学 · 物理学 2015-06-04 H. Jamgotchian , Y. Colignon , N. Hamzaoui , B. Ealet , J. Y. Hoarau , B. Aufray , J. P. Bibérian

Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We…

介观与纳米尺度物理 · 物理学 2019-10-23 M. Grzeszczyk , M. R. Molas , K. Nogajewski , M. Bartoš , A. Bogucki , C. Faugeras , P. Kossacki , A. Babiński , M. Potemski

The crystal structure of MoS$_2$ with strong covalent bonds in plane and weak Van der Waals interactions out of plane gives rise to interesting properties for applications such as solid lubrication, optoelectronics, and catalysis, which can…

材料科学 · 物理学 2021-07-28 Rijan Karkee , Enrique Guerrero , David A. Strubbe

We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the…

The electronic structure, specific heat, and thermal conductivity of silicon embedded in a monolayer graphene nanosheet are studied using Density Functional Theory. Two different shapes of the substitutional Si doping in the graphene are…

介观与纳米尺度物理 · 物理学 2019-10-29 Hunar Omar Rashid , Nzar Rauf Abdullah , Vidar Gudmundsson

Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…

超导电性 · 物理学 2021-06-25 P. Bonnet , F. Chiodi , D. Flanigan , R. Delagrange , N. Brochu , D. Débarre , H. le Sueur

The search for a two-dimensional material that simultaneously fulfills some properties for its use in spintronics and optoelectronics, i.e., a suitable bandgap with high in-plane carrier mobility and good environmental stability, is the…

材料科学 · 物理学 2023-10-05 I. Arias-Camacho , A. M León , J. Mejía-Lopez

We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface, by virtue of density functional theory and tight-binding calculations.Our results show that the Dirac character of low energy…

介观与纳米尺度物理 · 物理学 2018-03-07 Vahid Derakhshan , Ali G. Moghaddam , Davide Ceresoli

Diamond and diamond-like carbon (DLC) are used as coating materials for numerous applications, ranging from biomedicine to tribology. Recently, it has been shown that the hydrophilicity of the carbon films can be enhanced by silicon doping,…

介观与纳米尺度物理 · 物理学 2016-04-19 Seiji Kajita , M. C. Righi

Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), a SF…

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The…

Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…

材料科学 · 物理学 2023-08-23 Quinn T. Campbell , Shashank Misra , Andrew D. Baczewski

Free-standing and well-ordered two-dimensional (2D) silica monolayers with tetrahedral (T-silica) and octahedral (O-silica) building blocks are found to be stable by first principles calculations; T-silica is formed by corner-sharing SiO4…

材料科学 · 物理学 2015-08-13 Gaoxue Wang , G. C. Loh , Ravindra Pandey , Shashi P. Karna

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when…

材料科学 · 物理学 2021-07-14 Y. W. Sun , D. Holec , D. Gehringer , L. Li , O. Fenwick , D. J. Dunstan , C. J. Humphreys
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