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相关论文: Variable-range hopping in 2D quasi-1D electronic s…

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Computer modeling of the VRH conductivity in the two-dimensional system has been done by kinetic Monte Carlo method, which includes some new elements. Study of the temperature dependence of the conductivity, testing of the different scaling…

强关联电子 · 物理学 2016-08-31 D. N. Tsigankov , A. L. Efros

The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction…

介观与纳米尺度物理 · 物理学 2012-05-23 Brian Skinner , Tianran Chen , B. I. Shklovskii

We study the effect of impurities on the ground state and the low-temperature dc transport in a 1D chain and quasi-1D systems of many parallel chains. We assume that strong interactions impose a short-range periodicicity of the electron…

介观与纳米尺度物理 · 物理学 2007-05-23 M. M. Fogler , S. Teber , B. I. Shklovskii

Qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport states brought into resonance by Coulomb potentials produced…

无序系统与神经网络 · 物理学 2009-10-31 V. I. Kozub , S. D. Baranovskii , I. Shlimak

The variable range hopping (VRH) model has been widely applied to describe electrical transport in disordered systems, providing theoretical formulas to fit temperature-dependent electric conductivity. These models rely on oversimplified…

无序系统与神经网络 · 物理学 2026-01-16 Chenxin Qin , Chenyan Wang , Mouyang Cheng , Ji Chen

In a film with large dielectric constant $\kappa$ the electric field of an electron spreads inside the film before exiting the film at large distances of order of $\kappa d$ ($d$ is the film width). This leads to the logarithmic Coulomb…

无序系统与神经网络 · 物理学 2008-04-07 B. I. Shklovskii

Transport in disordered systems often occurs via the variable range hopping (VRH) in the dilute carrier density limit, where electrons hop between randomly distributed localized levels. We study the nonequilibrium transport by a uniform DC…

无序系统与神经网络 · 物理学 2025-09-24 Kunal Mozumdar , Herbert F. Fotso , Jong E. Han

For the low-temperature electrical conductance of a disordered {\it quantum insulator} in $d$-dimensions, Mott \cite{mott} had proposed his Variable Range Hopping (VRH) formula, $G(T) = G_0 {\rm exp}[-(T_0/T)^{\gamma}]$, where $G_0$ is a…

无序系统与神经网络 · 物理学 2007-05-23 Asok K. Sen , Somnath Bhattacharya

The variable range hopping results for noninteracting electrons of Mott and Shklovskii are generalized to 1D disordered charge density waves and Luttinger liquids using an instanton approach. Following a recent paper by Nattermann,…

强关联电子 · 物理学 2009-06-21 Sergey V. Malinin , Thomas Nattermann , Bernd Rosenow

We develop a theory of a variable range hopping transport in granular conductors based on the sequential electron tunnelling through many grains in the presence of the strong Coulomb interaction. The processes of quantum tunnelling of real…

介观与纳米尺度物理 · 物理学 2007-05-23 I. S. Beloborodov , A. V. Lopatin , V. M. Vinokur , V. I. Kozub

We investigate theoretically the effect of a finite electric field on the resistivity of a disordered one-dimensional system in the variable-range hopping regime. We find that at low fields the transport is inhibited by rare fluctuations in…

介观与纳米尺度物理 · 物理学 2007-05-23 M. M. Fogler , R. S. Kelley

Conditions at which a quasi-one-dimensional (1D) electron system can be considered as a quantum liquid of impenetrable charged particles are theoretically analyzed. In the presence of an inert, neutralizing background, a motion of…

超导电性 · 物理学 2024-06-21 Yu. P. Monarkha

We use a mean-field (Hartree-like) approach to study the conductance of a strongly localized electron system in two dimensions. We find a crossover between a regime where Coulomb interactions modify the conductance significantly to a regime…

无序系统与神经网络 · 物理学 2015-05-14 Ariel Amir , Yuval Oreg , Yoseph Imry

One-dimensional (1D) quantum wires provide a versatile platform for studying strong electron-electron interactions and collective excitations under confinement. Coulomb drag between 1D systems offers a powerful probe of Tomonaga-Luttinger…

介观与纳米尺度物理 · 物理学 2026-03-24 Mingyang Zheng , Rebika Makaju , Rasul Gazizulin , Alex Levchenko , Sadhvikas J. Addamane , Dominique Laroche

Charge transport in disordered organic semiconductors occurs by hopping of charge carriers between localized sites that are randomly distributed in a strongly energy dependent density of states. Extracting disorder and hopping parameters…

材料科学 · 物理学 2021-03-08 Tanvi Upreti , Yuming Wang , Huotian Zhang , Dorothea Scheunemann , Feng Gao , Martijn Kemerink

On the basis of the Kubo-Luttinger linear response theory combined with the scaling theory of Anderson localization predicting the energy dependence of localization length near the mobility edge, we have studied the thermoelectric response…

材料科学 · 物理学 2022-04-07 Takahiro Yamamoto , Masao Ogata , Hidetoshi Fukuyama

We study the quantum non linear response to an applied electric field $E$ of a one dimensional pinned charge density wave or Luttinger liquid in presence of disorder. From an explicit construction of low lying metastable states and of…

无序系统与神经网络 · 物理学 2007-05-23 Thomas Nattermann , Thierry Giamarchi , Pierre Le Doussal

We study the variable-range hopping (VRH) of bosons in an array of sites with short-range interactions and a large characteristic coordination number. The latter leads to strong quantum interference phenomena yet allows for their analytical…

介观与纳米尺度物理 · 物理学 2013-05-30 S. V. Syzranov , A. Moor , K. B. Efetov

It is shown that pinning of an electron Wigner crystal by a small concentration of charged impurities creates the finite density of charged localized states near the Fermi level. In the case of residual impurities in the spacer this density…

凝聚态物理 · 物理学 2009-11-10 B. I. Shklovskii

Mott's variable range hopping (v.r.h.) is the phonon-induced hopping of electrons in disordered solids (such as doped semiconductors) within the regime of strong Anderson localization. It was introduced by N.~Mott to explain the anomalous…

概率论 · 数学 2025-07-09 Alessandra Faggionato
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