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The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…

For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…

材料科学 · 物理学 2011-11-07 Z. Wilamowski , A. Werpachowska

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…

介观与纳米尺度物理 · 物理学 2007-05-23 Kimberley C. Hall , Michael E. Flatté

Spintronic devices that utilize the spin degree of freedom of a charge carrier to store, process or transmit information, may be better performers than their traditional electronic counterparts if special properties of "spin" are exploited…

介观与纳米尺度物理 · 物理学 2007-05-23 S. Bandyopadhyay

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…

凝聚态物理 · 物理学 2009-11-07 S. Das Sarma , Jaroslav Fabian , Xuedong Hu , Igor Zutic

Champions of spintronics often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional charge based electronic devices. Yet, not a single spintronic device exists…

介观与纳米尺度物理 · 物理学 2012-10-16 Supriyo Bandyopadhyay

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…

介观与纳米尺度物理 · 物理学 2016-11-15 Wenjing Yan , Oihana Txoperena , Roger Llopis , Hanan Dery , Luis E. Hueso , Fèlix Casanova

An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed…

介观与纳米尺度物理 · 物理学 2015-05-18 S. Bandyopadhyay

We propose a method of constructing cold atom analogs of the spintronic device known as the Datta-Das transistor (DDT), which despite its seminal conceptual role in spintronics, has never been successfully realized with electrons. We…

介观与纳米尺度物理 · 物理学 2009-02-09 J. Y. Vaishnav , Julius Ruseckas , Charles W. Clark , Gediminas Juzeliunas

A recently published report in the journal Science claims that the Datta-Das Spin Field Effect Transistor has been demonstrated because an exact agreement was found between the voltage modulation in a fabricated structure and a theoretical…

介观与纳米尺度物理 · 物理学 2009-11-03 Supriyo Bandyopadhyay

Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…

介观与纳米尺度物理 · 物理学 2018-07-16 Shengwei Jiang , Lizhong Li , Zefang Wang , Jie Shan , Kin Fai Mak

Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin…

介观与纳米尺度物理 · 物理学 2022-09-29 Chetan Sriram Madasu , Mehedi Hasan , Ketan D. Rathod , Chang Chi Kwong , David Wilkowski

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to…

介观与纳米尺度物理 · 物理学 2015-05-19 J. Wunderlich , B. G. Park , A. C. Irvine , L. P. Zarbo , E. Rozkotova , P. Nemec , V. Novak , Jairo Sinova , T. Jungwirth

Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has…

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…

材料科学 · 物理学 2025-12-03 Ziye Zhu , Xianzhang Chen , Xunkai Duan , Zhou Cui , Jiayong Zhang , Igor Zutic , Tong Zhou

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…

材料科学 · 物理学 2018-02-20 V. Baltz , A. Manchon , M. Tsoi , T. Moriyama , T. Ono , Y. Tserkovnyak

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…

介观与纳米尺度物理 · 物理学 2007-05-23 S. Bandyopadhyay , M. Cahay

Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these…

材料科学 · 物理学 2022-11-04 Kang Wang , Vineetha Bheemarasetty , Junhang Duan , Shiyu Zhou , Gang Xiao

Spintronic diodes are emerging as disruptive candidates for impacting several technological applications ranging from the Internet of Things to Artificial Intelligence. In this letter, an overview of the recent achievements on spintronic…

介观与纳米尺度物理 · 物理学 2021-05-05 Giovanni Finocchio , Riccardo Tomasello , Bin Fang , Anna Giordano , Vito Puliafito , Mario Carpentieri , Zhongming Zeng

We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Cahay , S. Bandyopadhyay
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