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相关论文: Theory of Mott insulator/band insulator heterostru…

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It is shown that LaTiO_3 in superlattices with SrTiO_3 is not a Mott insulator but a strongly correlated metal. The tetragonal lattice geometry imposed by the SrTiO_3 substrate leads to an increase of the Ti 3d t2g band width and a reversal…

强关联电子 · 物理学 2009-11-13 H. Ishida , A. Liebsch

The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the…

Motivated by experiments on atomically smooth layers of LaTiO$_3$, a Mott insulator, sandwiched between layers of SrTiO$_3$, a band insulator, a simple model for such heterostructures is studied using quasi one-dimensional lattices and the…

强关联电子 · 物理学 2009-11-11 S. S. Kancharla , E. Dagotto

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit…

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

The dynamical mean-field theory together with the non-crossing approximation is used to set up a novel scheme to study the electronic structure of strongly correlated electron systems. The non-interacting band structure is obtained from a…

强关联电子 · 物理学 2007-05-23 M. B. Zoelfl , Th. Pruschke , J. Keller , A. I. Poteryaev , I. A. Nekrasov , V. I. Anisimov

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory (LDA+U) to (n,m) multilayers, 1<n,m<9. If the on-site repulsion on Ti is large enough to model the magnetic insulating behavior of…

材料科学 · 物理学 2007-05-23 Rossitza Pentcheva , Warren E. Pickett

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature…

超导电性 · 物理学 2022-01-25 Lele Ju , Tianshuang Ren , Zhu Li , Zhongran Liu , Chuanyu Shi , Yuan Liu , Siyuan Hong , Jie Wu , He Tian , Yi Zhou , Yanwu Xie

In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO$_3$ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited…

We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…

强关联电子 · 物理学 2016-05-10 Jason Iaconis , Hiroaki Ishizuka , D. N. Sheng , Leon Balents

We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory…

强关联电子 · 物理学 2014-12-10 J. E. Kleibeuker , Z. Zhong , H. Nishikawa , J. Gabel , A. Müller , F. Pfaff , M. Sing , K. Held , R. Claessen , G. Koster , G. Rijnders

Correlated oxide heterostructures pose a challenging problem in condensed matter research due to their structural complexity interweaved with demanding electron states beyond the effective single-particle picture. By exploring the…

材料科学 · 物理学 2018-04-05 Frank Lechermann

Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface…

材料科学 · 物理学 2015-12-24 Hrishit Banerjee , Sumilan Banerjee , Mohit Randeria , Tanusri Saha-Dasgupta

We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and…

We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to…

介观与纳米尺度物理 · 物理学 2020-12-30 N. Lebedev , M. Stehno , A. Rana , N. Gauquelin , J. Verbeeck , A. Brinkman , J. Aarts

We investigate the role of electron correlation in the electronic structure of honeycomb lattice Li$_2$RuO$_3$ using photoemission spectroscopy and band structure calculations. Monoclinic Li$_2$RuO$_3$ having Ru network as honeycomb lattice…

强关联电子 · 物理学 2023-01-24 Sakshi Bansal , Asif Ali , B. H. Reddy , Ravi Shankar Singh

Heterostructures are ubiquitous in many optoelectronic devices and as photocatalysts. One of the key features of a heterojunction is the proper band alignment between the two materials. Estimation of the correct relative band positions with…

介观与纳米尺度物理 · 物理学 2024-08-13 Raheel Hammad , Snehith Adabala , Soumya Ghosh

Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces…

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