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The photoluminescence polarizations of (In,Ga)As/GaAs quantum dots annealed at different temperatures are studied as a function of external magnetic field (Hanle curves). In these dependencies, remarkable resonant features appear due to…

We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically-injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at…

介观与纳米尺度物理 · 物理学 2015-05-19 M. E. Nowakowski , G. D. Fuchs , S. Mack , N. Samarth , D. D. Awschalom

The periodic optical orientation of electron spins in (In,Ga)As/GaAs quantum dots leads to the formation of electron spin precession modes about an external magnetic field which are resonant with the pumping periodicity. As the electron…

介观与纳米尺度物理 · 物理学 2019-08-15 E. Evers , V. V. Belykh , N. E. Kopteva , I. A. Yugova , A. Greilich , D. R. Yakovlev , D. Reuter , A. D. Wieck , M. Bayer

Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum in which the proposed structure is remarkably spin-selective. For such…

介观与纳米尺度物理 · 物理学 2014-01-28 Anibal T. Bezerra , Leonardo K. Castelano , Marcos H. Degani , Marcelo Z. Maialle , Paulo F. Farinas , Nelson Studart

Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the…

介观与纳米尺度物理 · 物理学 2014-09-09 G. Sallen , S. Kunz , T. Amand , L. Bouet , T. Kuroda , T. Mano , D. Paget , O. Krebs , X. Marie , K. Sakoda , B. Urbaszek

Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification…

介观与纳米尺度物理 · 物理学 2020-09-14 Michael Macmahon , Joseph R. Iafrate , Michael J. Dominguez , Vanessa Sih

We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the…

介观与纳米尺度物理 · 物理学 2015-06-22 G. Wang , C. R. Zhu , B. L. Liu , H. Ye , A. Balocchi , T. Amand , B. Urbaszek , H. Yang , X. Marie

The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a…

介观与纳米尺度物理 · 物理学 2017-11-15 R. W. Mocek , V. L. Korenev , M. Bayer , M. Kotur , R. I. Dzhioev , D. O. Tolmachev , G. Cascio , K. V. Kavokin , D. Suter

The optically induced polarization of localized electron spins in an ensemble of quantum dots (QDs) dephases due to the interaction with the surrounding nuclear spins. Despite this dephasing, the spins in the QDs can be controlled to…

介观与纳米尺度物理 · 物理学 2022-04-08 P. Schering , G. S. Uhrig

A method for high-field optically detected nuclear magnetic resonance (ODNMR) is developed sensitive to 10**8 nuclei. Nuclear spin transitions are induced using a radio frequency coil and detected through Faraday rotation spectroscopy.…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Poggio , D. D. Awschalom

We propose a new mechanism for polarizing nuclear spins in quantum dots, based on periodic modulation of the hyperfine coupling by electric driving at the electron spin resonance frequency. Dynamical nuclear polarization results from…

介观与纳米尺度物理 · 物理学 2008-04-14 M. S. Rudner , L. S. Levitov

Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…

介观与纳米尺度物理 · 物理学 2015-05-14 M. K. Chan , Q. O. Hu , J. Zhang , T. Kondo , C. J. Palmstrøm , P. A. Crowell

We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…

材料科学 · 物理学 2007-05-23 R. C. Myers , A. C. Gossard , D. D. Awschalom

A new method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor $\nu=3$. Using a narrow channel sample, where the width varies stepwise along the electron flow, we find…

介观与纳米尺度物理 · 物理学 2007-05-23 Yosuke Komori , Tohru Okamoto

Nuclear resonant x-ray diffraction in grazing incidence geometry is used to determine the lateral magnetic configuration in a one-dimensional lattice of ferromagnetic nanostripes. During magnetic reversal, strong nuclear superstructure…

The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically-detected nuclear magnetic resonance spectroscopies. The bandgap, electron spin…

材料科学 · 物理学 2009-11-11 H. Knotz , A. W. Holleitner , J. Stephens , R. C. Myers , D. D. Awschalom

Conduction electrons are used to optically polarize, detect and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field,…

介观与纳米尺度物理 · 物理学 2009-10-31 G. Salis , D. T. Fuchs , J. M. Kikkawa , D. D. Awschalom , Y. Ohno , H. Ohno

The spin dynamics of localized donor-bound electrons interacting with the nuclear spin ensemble in $n$-doped GaAs epilayers is studied using nuclear spin polarization by light with modulated circular polarization. We show that the observed…

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under the microwave and radio- frequency…

介观与纳米尺度物理 · 物理学 2009-11-07 Chris Hillman , H. W. Jiang

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…

材料科学 · 物理学 2009-11-10 J. Stephens , J. Berezovsky , J. P. McGuire , L. J. Sham , A. C. Gossard , D. D. Awschalom