中文
相关论文

相关论文: Superconductivity in diamond

200 篇论文

Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration…

Superconductivity of boron-doped diamond, reported recently at T_c=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond stretch mode is 60%…

超导电性 · 物理学 2007-05-23 K. -W. Lee , W. E. Pickett

Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical…

超导电性 · 物理学 2007-05-23 Y. Takano , M. Nagao , K. Kobayashi , H. Umezawa , I. Sakaguchi , M. Tachiki , T. Hatano , H. Kawarada

Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond…

In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic…

超导电性 · 物理学 2009-11-13 M. Kriener , T. Muranaka , Z. -A. Ren , J. Kato , J. Akimitsu , Y. Maeno

The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron doping concentration of…

Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic…

Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron…

We substantiate by calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB$_2$, albeit in 3 dimensions. Holes at the top of the…

超导电性 · 物理学 2007-05-23 Lilia Boeri , Jens Kortus , O. K. Andersen

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a…

超导电性 · 物理学 2009-11-13 M. Kriener , T. Muranaka , J. Kato , Z. A. Ren , J. Akimitsu , Y. Maeno

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide…

超导电性 · 物理学 2015-05-13 M. Kriener , T. Muranaka , Y. Kikuchi , J. Akimitsu , Y. Maeno

We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by Chemical Vapor Deposition, we pattern by…

Search for new high-temperature superconductors and insight into their superconducting mechanism are of fundamental importance in condensed matter physics. The discovery of near-room temperature superconductivity at more than a million…

In 2007, type-I superconductivity in heavily boron-doped silicon carbide was discovered. The question arose, if it is possible to achieve a superconducting phase by introducing dopants different from boron. Recently, aluminum-doped silicon…

超导电性 · 物理学 2015-05-13 M. Kriener , T. Muranaka , J. Akimitsu , Y. Maeno

Heavily-boron-doped diamond films become superconducting with critical temperatures $T_c$ well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm$^{-1}$, by also using Coherent Synchrotron Radiation. We thus…

超导电性 · 物理学 2009-11-11 M. Ortolani , S. Lupi , L. Baldassarre , P. Calvani , U. Schade , Y. Takano , M. Nagao , T. Takenouchi , H. Kawarada

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we…

超导电性 · 物理学 2009-11-13 M. Kriener , Y. Maeno , T. Oguchi , Z. -A. Ren , J. Kato , T. Muranaka , J. Akimitsu

We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a…

Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many…

超导电性 · 物理学 2024-03-04 Shisheng Lin , Xutao Yu , Minhui Yang , Huikai Zhong , Jiarui Guo

The electronic structure, lattice dynamics, and electron-phonon coupling of the boron-doped diamond are investigated using the density functional supercell method. Our results indicate the boron-doped diamond is a phonon mediated…

超导电性 · 物理学 2007-05-23 H. J. Xiang , Zhenyu Li , Jinlong Yang , J. G. Hou , Qingshi Zhu

In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave…

‹ 上一页 1 2 3 10 下一页 ›