中文
相关论文

相关论文: Charge transport through a SET with a mechanically…

200 篇论文

We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…

介观与纳米尺度物理 · 物理学 2015-05-18 Yu. A. Pashkin , T. F. Li , J. P. Pekola , O. Astafiev , D. A. Knyazev , F. Hoehne , H. Im , Y. Nakamura , J. S. Tsai

The current noise spectrum of a single-electron transistor (SET) coupled to a nano-mechanical resonator is calculated in the classical regime. Correlations between the charge on the SET island and the position of the resonator give rise to…

介观与纳米尺度物理 · 物理学 2009-11-10 A. D. Armour

We study the tunneling conductance of nano-scale quantum ``shuttles'' in connection with a recent experiment (H. Park et al., Nature, 407, 57 (2000)) in which a vibrating C^60 molecule was apparently functioning as the island of a single…

凝聚态物理 · 物理学 2009-11-07 K. D. McCarthy , N. Prokof'ev , M. T. Tuominen

The nanomechanical single-electron shuttle is a resonant system in which a suspended metallic island oscillates between and impacts at two electrodes. This setup holds promise for one-by-one electron transport and the establishment of an…

介观与纳米尺度物理 · 物理学 2013-02-21 Michael J. Moeckel , Darren R. Southworth , Eva M. Weig , Florian Marquardt

We consider electron transport through a mobile island (i.e., a nanomechanical oscillator) which can accommodate one or two excess electrons and show that, in contrast to immobile islands, the Coulomb blockade peaks, associated with the…

材料科学 · 物理学 2008-02-14 J. R. Johansson , L. G. Mourokh , A. Yu. Smirnov , Franco Nori

We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find…

介观与纳米尺度物理 · 物理学 2009-11-11 D. A. Rodrigues , A. D. Armour

The strong coupling between electronic transport in a single-level quantum dot and a capacitively coupled nano-mechanical oscillator may lead to a transition towards a mechanically-bistable and blocked-current state. Its observation is at…

介观与纳米尺度物理 · 物理学 2016-09-28 G Micchi , Rémi Avriller , F Pistolesi

We consider a single electron transistor where the central island can oscillate. It has been shown that for weak coupling of the elastic and electric degrees of freedom the position of the island fluctuates with a small variation of the…

介观与纳米尺度物理 · 物理学 2008-01-29 F. Pistolesi , S. Labarthe

We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Fernandez-Rossier , R. Aguado

We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement…

介观与纳米尺度物理 · 物理学 2009-11-10 D. Mozyrsky , I. Martin , M. B. Hastings

We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…

介观与纳米尺度物理 · 物理学 2011-12-13 Stephan Lindebaum , Jürgen König

An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunnelling length is much greater than the amplitude of the zero point…

介观与纳米尺度物理 · 物理学 2009-11-10 D. Fedorets , L. Y. Gorelik , R. I. Shekhter , M. Jonson

We introduce a new mesoscopic transistor, which consists of a superconducting island connected to superconducting and normal electrodes via two mesoscopic tunnel junctions. Furthermore, the island is being charged through a resistor. The…

介观与纳米尺度物理 · 物理学 2007-05-23 H. Seppä , J. Hassel

Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…

介观与纳米尺度物理 · 物理学 2010-11-25 M. A. Laakso , T. T. Heikkilä , Yuli V. Nazarov

We investigate electrical transport through a single-electron transistor coupled to a nanomechanical oscillator. Using a combination of a master-equation approach and a numerical Monte Carlo method, we calculate the average current and the…

介观与纳米尺度物理 · 物理学 2007-05-23 C. B. Doiron , W. Belzig , C. Bruder

The mechanism of the magneto-Coulomb oscillation in ferromagnetic single electron transistors (SET's) is theoretically considered. Variations in the chemical potentials of the conduction electrons in the ferromagnetic island electrode and…

介观与纳米尺度物理 · 物理学 2009-10-30 Hiroshi Shimada , Keiji Ono , Youiti Ootuka

We analyse the quantum dynamics of a nanomechanical resonator coupled to a normal-state single-electron transistor (SET). Starting from a microscopic description of the system, we derive a master equation for the SET island charge and…

介观与纳米尺度物理 · 物理学 2009-11-11 Denzil Rodrigues , Andrew Armour

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

介观与纳米尺度物理 · 物理学 2013-04-29 R. I. Shekhter , L. Y. Gorelik , I. V. Krive , M. N. Kiselev , A. V. Parafilo , M. Jonson

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

介观与纳米尺度物理 · 物理学 2015-06-19 R. I. Shekhter , L. Y. Gorelik , I. V. Krive , M. N. Kiselev , S. I. Kulinich , A. V. Parafilo , K. Kikoin , M. Jonson

We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have…

介观与纳米尺度物理 · 物理学 2009-11-13 J. J. Toppari , T. Kühn , A. P. Halvari , G. S. Paraoanu
‹ 上一页 1 2 3 10 下一页 ›