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相关论文: Electronic structure of wurtzite and zinc-blende A…

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The electronic structure and the anisotropy of the Al - N {\pi} and {\sigma} chemical bonding of wurtzite AlN has been investigated by bulk-sensitive total fluorescence yield absorption and soft x-ray emission spectroscopies. The measured N…

材料科学 · 物理学 2011-12-30 M. Magnuson , M. Mattesini , C. Höglund , J. Birch , L. Hultman

The wurtzite (wz) structure of CdS is analyzed using density functional theory within the generalized gradient approximation (GGA) and Hubbard correction (GGA+U). The total energy convergence evaluation is carried out concerning energy…

材料科学 · 物理学 2022-06-22 Ankan Biswas , S. R. Meher , Deepak K. Kaushik

The structural and electronic properties of the wurtzite phase of the InAs and GaAs compounds are, for the first time, studied within the framework of Density Functional Theory (DFT). We used the full-potential linearized augmented plane…

材料科学 · 物理学 2007-05-23 Zeila Zanolli , Ulf von Barth

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by…

材料科学 · 物理学 2011-12-30 Martin Magnuson , Maurizio Mattesini , Carina Höglund , Jens Birch , Lars Hultman

We report calculated, electronic and related properties of wurtzite and zinc blende gallium nitrides (w-GaN, zb-GaN). We employed a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism.…

Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different…

介观与纳米尺度物理 · 物理学 2014-02-27 L. C. O. Dacal , A. Cantarero

In this work we study the structural stability and electronic properties of the Beryllium sulphide nanowires (NWs) in both zinc blende (ZB) and wurtzite (WZ) phases with triangle and hexagonal cross section, using first principle…

材料科学 · 物理学 2015-05-14 Somayeh Faraji , Ali Mokhtari

Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the LDA, GGA, and LDA+U approaches. Calculations of…

软凝聚态物质 · 物理学 2009-11-13 S. Zh. Karazhanov , P. Ravindran , A. Kjekshus , H. Fjellvag , B. G. Svensson

The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite…

The ground state structures of the A$_x$B$_{1-x}$C wurtzite (WZ) alloys with $x=$0.25, 0.5, and 0.75 are revealed by a ground state search using the valence-force field model and density-functional theory total energy calculations. It is…

材料科学 · 物理学 2009-09-30 H. J. Xiang , Su-Huai Wei , Shiyou Chen , X. G. Gong

Electronic structure and band characteristics for zinc monochalcogenides with zinc-blende- and wurtzite-type structures are studied by first-principles density-functional-theory calculations with different approximations. It is shown that…

材料科学 · 物理学 2009-11-11 S. Zh. Karazhanov , P. Ravindran , U. Grossner , A. Kjekshus , H. Fjellvag , B. G. Svensson

First-principles density-functional calculations have been performed for zinc monochalcogenides with zinc-blende- and wurtzite-type structures. It is shown that the local-density approximation underestimates the band gap, misplaces the…

材料科学 · 物理学 2009-11-11 S. Zh. Karazhanov , P. Ravindran , U. Grossner , A. Kjekhus , H. Fjellvag , B. G. Svensson

Soft x-ray emission and absorption spectroscopy of the O K-edge are employed to investigate the electronic structure of wurtzite ZnO(0001). A quasiparticle band structure calculated within the GW approximation agrees well with the data,…

The increasing interest of nanowhiskers for technological applications has led to the observation of the zinc-blend/wurtzite polytypism. Polytypic nanowhiskers could also play, by their characteristics, an important role on the design of…

介观与纳米尺度物理 · 物理学 2015-03-17 Paulo Eduardo de Faria Junior , Guilherme Matos Sipahi

While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures…

介观与纳米尺度物理 · 物理学 2013-03-05 Amrit De , Craig E. Pryor

We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the…

凝聚态物理 · 物理学 2009-10-28 Daniel Olguin , Rafael Baquero

A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are…

We have measured the specific heat of zincblende ZnS for several isotopic compositions and over a broad temperature range (3 to 1100 K). We have compared these results with calculations based on ab initio electronic band structures,…

材料科学 · 物理学 2015-05-14 M. Cardona , R. K. Kremer , R. Lauck , G. Siegle , A. Munoz , A. H. Romero , A. Schindler

Using the hybrid exchange-correlation functional within the density-functional theory, we have systematically investigated the structural and electronic properties of MO (M = Be, Mg, Ca, Sr, Ba, Zn, Cd) in binary rocksalt (B1), zincblende…

材料科学 · 物理学 2019-03-19 Jinying Yu , Mingke Zhang , Zihan Zhang , Shangwei Wang , Yelong Wu

We investigate the effect of basal-plane stacking faults on the structural, electronic, and polarization properties of wurtzite GaN and ZnO. This theoretical study is performed within density-functional theory (DFT) using periodic hexagonal…

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