相关论文: Probing the Electrostatics of Integer Quantum Hall…

Tunneling from a two-dimensional contact into quantum-Hall edges is considered theoretically for a case where the barrier is extended, uniform, and parallel to the edge. In contrast to previously realized tunneling geometries, details of…

Momentum resolved magneto-tunnelling spectroscopy is performed at a single sharp quantum Hall edge. We directly probe the structure of individual integer quantum Hall (QH) edge modes, and find that an epitaxially overgrown cleaved edge…

Edge states reflect the key physical properties yet are difficult to probe individually, particularly when several states are present at an edge. We present momentum resolved tunneling spectroscopy between a quantum well and a quantum wire…

The edge of a two-dimensional electron system (2DES) in a magnetic field consists of one-dimensional (1D) edge-channels that arise from the confining electric field at the edge of the specimen$^{1-3}$. The crossed electric and magnetic…

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both…

Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional…

The nature of the fractional quantum Hall state with filling factor $\nu=2/3$ and its edge modes continues to remain an open problem in low-dimensional condensed matter physics. Here, we suggest an experimental setting to probe the…

The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…

We study the tunneling current between edge states of quantum Hall liquids across a single long contact region, and predict a resonance at a bias voltage set by the scale of the edge velocity. For typical devices and edge velocities…

We present a device architecture of hybrid-edge and dual-gated quantum point contact. We demonstrate improved electrostatic control over the separation, position, and coupling of each broken-symmetry compressible strip in graphene. Via…

We perform momentum-conserving tunneling spectroscopy using a GaAs cleaved-edge overgrowth quantum wire to investigate adjacent quantum Hall edge states. We use the lowest five wire modes with their distinct wave functions to probe each…

We calculate the electron spectral functions at the edges of the Moore-Read Pfaffian and anti-Pfaffian fractional quantum Hall states, in the clean limit. We show that their qualitative differences can be probed using momentum resolved…

We report on the transition from magnetic edge to electric edge transport in a split magnetic gate device which applies a notch magnetic field to a two-dimensional electron gas. The gate bias allows tuning the overlap of magnetic and…

In a quantum Hall interferometer, the dependence of the signal on source-drain voltage is controlled by details of the edge physics, such as the velocities of edge modes and the interaction between them and with screening layers. Such…

Devices exhibiting the integer quantum Hall effect can be modeled by one-electron Schroedinger operators describing the planar motion of an electron in a perpendicular, constant magnetic field, and under the influence of an electrostatic…

A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences…

We have studied a clean finite-length line junction between interacting counterpropagating single-branch fractional-quantum-Hall edge channels. Exact solutions for low-lying excitations and transport properties are obtained when the two…

One of the most intriguing and fundamental properties of topological materials is the correspondence between the conducting edge states and the gapped bulk spectrum. So far, it has been impossible to access the full evolution of edge states…

We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an…

In this work, we exploit the findings of the screening theory of the integer quantized Hall effect (QHE) based on the formation of the incompressible strips and its essential influence on the global resistances and propose certain…