相关论文: Gate-induced ionization of single dopant atoms

We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…

One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics…

Quantum computers based on rare-earth-ion-doped crystals show promising properties in terms of scalability and connectivity if single ions can be used as qubits. Through simulations, we investigate gate operations on such qubits and discuss…

Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor…

We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant…

The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When…

Following a recent proposal of L. Wang and D. Babikov, J. Chem. Phys. 137, 064301 (2012), we theoretically illustrate the possibility of using the motional states of a $Cd^+$ ion trapped in a slightly anharmonic potential to simulate the…

We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…

In this paper initial experiments towards constructing simple quantum gates in a solid state material are presented. Instead of using specially tailored materials, the aim is to select a subset of randomly distributed ions in the material,…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…

The dissipation induced by a metallic gate on the low-energy properties of interacting 1D electron liquids is studied. As function of the distance to the gate, or the electron density in the wire, the system undergoes a quantum phase…

The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…

The ground state properties of a one-dimensional system with particle-hole symmetry, consisting of a gate controlled dot coupled to an interacting reservoir, are explored using the numerical DMRG method. It was previously shown that the…

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a…

A new semiclassical approach to ionization by an oscillating field is presented. For a delta-function atom, an asymptotic analysis is performed with respect to a quantity h, defined as the ratio of photon energy to ponderomotive energy.…

We consider theoretically a magnetic impurity spin driven by polarized electrons tunneling through a double quantum dot system. Spin blockade effect and spin conservation in the system make the magnetic impurity sufficiently interact with…

We analyze the effect of a gate on the conductance of molecules by separately evaluating the gate-induced polarization and the potential shift of the molecule relative to the leads. The calculations use ab initio density functional theory…