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相关论文: Silicon-based molecular electronics

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Density-functional calculations are used to clarify the role of an ultrathin LiF layer on Al electrodes used in molecular electronics. The LiF layer creates a sharp density of states (DOS), as in a scanning-tunneling microscope (STM) tip.…

Molecular electronics is a fascinating area of research with the ability to tune device properties by a chemical tailoring of organic molecules. However, molecular electronics devices often suffer from dispersion and lack of reproducibility…

介观与纳米尺度物理 · 物理学 2013-02-11 Nicolas Clement , David Guerin , Stephane Pleutin , Sylvie Godey , Dominique Vuillaume

We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , D. Natelson

Among different topological and related phases of condensed matter, nodal semimetals occupy a special place - the electronic band topology in these materials is related to three-dimensional bulk, rather than to surface, states. A great…

介观与纳米尺度物理 · 物理学 2021-04-28 A. V. Pronin , M. Dressel

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…

应用物理 · 物理学 2023-03-16 Jimy Encomendero , Vladimir Protasenko , Farhan Rana , Debdeep Jena , Huili Grace Xing

Inserting molecular monolayers within metal / semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as…

材料科学 · 物理学 2017-03-17 Ayelet Vilan , David Cahen

Due to high power consumption and difficulties with minimizing the CMOS transistor size, molecular electronics has been introduced as an emerging technology. Further, there have been noticeable advances in fabrication of molecular wires and…

新兴技术 · 计算机科学 2012-01-11 Mehdi Ghasemi , Mohammad Hossein Moaiyeri , Keivan Navi

We evaluate the microscopically relevant parameters for electrical transport of hybrid superconductor-semiconductor interfaces. In contrast to the commonly used geometrically constricted metallic systems, we focus on materials with…

超导电性 · 物理学 2021-04-21 Daniel Breunig , Song-Bo Zhang , Björn Trauzettel , T. M. Klapwijk

The use of single molecules to design electronic devices is an extremely challenging and fundamentally different approach to further downsizing electronic circuits. Two-terminal molecular devices such as diodes were first predicted [1] and,…

One of the ultimate goals of molecular electronics is to create technologies that will complement - and eventually supersede - Si-based microelectronics technologies. To reach this goal, electronic properties that mimic at least some of the…

介观与纳米尺度物理 · 物理学 2015-06-26 Bingqian Xu , Yonatan Dubi

Silicon, one of the most abundant elements found on Earth, has been an excellent choice of the semiconductor industry for ages. Despite it's remarkable applications in modern semiconductor-based electronic devices, the potential of cubic…

超导电性 · 物理学 2022-06-29 Monika Moun , Goutam Sheet

Transport through a single molecular conductor is considered, showing negative differential conductance behavior associated with phonon-mediated electron tunneling processes. This theoretical work is motivated by a recent experiment by…

介观与纳米尺度物理 · 物理学 2009-11-11 Alex Zazunov , Denis Feinberg , Thierry Martin

Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is…

Topological semimetals have emerged as an important class of quantum materials with novel electronic responses and unconventional transport phenomena. Among them, nodal-line semimetals are distinguished by band crossings that extend along…

材料科学 · 物理学 2026-05-11 Ashutosh S. Wadge , Pardeep K. Tanwar , Giuseppe Cuono , Carmine Autieri

Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…

材料科学 · 物理学 2026-02-26 Quinn T. Campbell , Andrew D. Baczewski , Shashank Misra , Evan M. Anderson

Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…

介观与纳米尺度物理 · 物理学 2013-04-25 Matias Urdampilleta , Svetlana Klyatskaya , Jean-Pierre Cleuziou , Mario Ruben , Wolfgang Wernsdorfer

Dream of developing molecule-based logic and memory device is more than 70-year-old. Presently, molecule-based devices are also considered for quantum computation hardware. The recent studies have shown the molecule connected to metal leads…

材料科学 · 物理学 2019-12-04 Pawan Tyagi , Edwards Friebe , Collin Baker

This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…

介观与纳米尺度物理 · 物理学 2009-11-07 Prashant Damle , Titash Rakshit , Magnus Paulsson , Supriyo Datta

Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…

材料科学 · 物理学 2011-02-17 Jun Yao , Lin Zhong , Douglas Natelson , James M. Tour

Tunneling of electrons through rotor-stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different…

化学物理 · 物理学 2016-05-27 Irina Petreska , Vladimir Ohanesjan , Ljupco Pejov , Ljupco Kocarev
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