中文
相关论文

相关论文: Effect of bulk inversion asymmetry on the Datta-Da…

200 篇论文

We analyze the spin expectation values for injected spin-polarized electrons (spin vectors) in a [001]-grown Rashba-Dresselhaus two-dimensional electron gas (2DEG). We generalize the calculation for point spin injection in semi-infinite…

介观与纳米尺度物理 · 物理学 2007-05-23 Ming-Hao Liu , Ching-Ray Chang

We consider a two-channel spin transistor with weak spin-orbit induced interband coupling. We show that the coherent transfer of carriers between the coupled channels gives rise to an \textit{additional} spin rotation. We calculate the…

介观与纳米尺度物理 · 物理学 2009-11-07 J. Carlos Egues , Guido Burkard , Daniel Loss

The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor…

介观与纳米尺度物理 · 物理学 2022-06-01 Hu Zhang , Chendong Jin , Ruqian Lian , Peng-Lai Gong , RuiNing Wang , JiangLong Wang , Xing-Qiang Shi

We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate…

介观与纳米尺度物理 · 物理学 2012-05-21 Luca Chirolli , D. Venturelli , F. Taddei , Rosario Fazio , V. Giovannetti

We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…

介观与纳米尺度物理 · 物理学 2007-05-23 V. Marigliano Ramaglia , D. Bercioux , V. Cataudella , G. De Filippis , C. A. Perroni

An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed…

介观与纳米尺度物理 · 物理学 2015-05-18 S. Bandyopadhyay

We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Cahay , S. Bandyopadhyay

We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…

其他凝聚态物理 · 物理学 2009-11-11 D. M. Gvozdic , U. Ekenberg

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the…

介观与纳米尺度物理 · 物理学 2011-04-01 B. Y. Sun , P. Zhang , M. W. Wu

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced…

It is revealed that in spin helix state of (001) quantum well system, strong suppression of D'yakonov-Perel' spin relaxation process occurs by an interplay between Rashba and Dresselhaus couplings over a wide range of Rashba coupling…

其他凝聚态物理 · 物理学 2009-11-13 Munekazu Ohno , Kanji Yoh

The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological…

介观与纳米尺度物理 · 物理学 2015-06-17 M. Pang , X. G. Wu

In many systems, planar Hall effect wherein transverse signal appears in response to longitudinal stimulus is rooted in spin-orbit coupling. A spin transistor put forward by Datta and Das on the other hand consists of ferromagnetic leads…

介观与纳米尺度物理 · 物理学 2023-06-21 Bijay Kumar Sahoo , Abhiram Soori

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…

介观与纳米尺度物理 · 物理学 2007-05-23 Liangbin Hu , Ju Gao , Shun-Qing Shen

We investigate the spin accumulation effect in eccentric semiconductor multichannel rings with Rashba spin-orbit interaction and threaded by a magnetic flux. Due to the finite eccentricity, the spin polarization induced at the borders of…

介观与纳米尺度物理 · 物理学 2015-05-13 L. E. Segura , M. J. Sánchez

We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined…

介观与纳米尺度物理 · 物理学 2011-10-12 Jae-Seung Jeong , Hyun-Woo Lee

The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this…

介观与纳米尺度物理 · 物理学 2009-11-11 Takaaki Koga , Yoshiaki Sekine , Junsaku Nitta

We investigate the transmission properties of a spin transistor coupled to two quantum point contacts acting as spin injector and detector. In the Fabry-Perot regime, transport is mediated by quasibound states formed between tunnel…

介观与纳米尺度物理 · 物理学 2016-08-10 M. I. Alomar , Llorenç Serra , David Sanchez

The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to…

材料科学 · 物理学 2010-04-22 Agnieszka Werpachowska , Tomasz Dietl

The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking…

‹ 上一页 1 2 3 10 下一页 ›