相关论文: Surface State Stark Shift in a Scanning Tunneling …
We study the light emission from a Ag(111) surface when the bias voltage on a scanning tunneling microscope (STM) junction is ramped into the field emission regime. Above the vacuum level, scanning tunneling spectroscopy (STS) shows a…
We present a low-temperature scanning tunneling spectroscopy study of the Au(111) and of the Cu(111) surface states showing that their binding energy increases when the tip is approached towards the surface. This result, supported by a…
We present a quantitative many-body analysis using the GW approximation of the decay rate $\Gamma$ due to electron-electron scattering of excitations in the Shockley surface state band of Ag(111), as measured using the scanning tunnelling…
We have studied the Tamm-type surface state of La(0001) by tunneling spectroscopy within a wide range of tunneling currents from 0.1 nA to 8000 nA, thereby tuning the electric-field strength in a tip-vacuum-sample tunnel junction. We…
By means of scanning tunneling spectroscopy (STS) we study the electronic structure of the III-V semiconductor surface InAs(111)A in the field emission regime (above the vacuum level). At high sample bias voltages (approaching +10 V), a…
Scanning Tunneling Microscopy (STM) has revolutionized our atomic scale understanding of surfaces and accelerated progress in nanotechnology. This technique, however, is restricted to metal or semiconducting samples, as it requires a tiny…
We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we…
The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the…
The inelastic lifetimes of electrons in image-potential states at Cu(100) that are Stark-shifted by the electrostatic tip-sample interaction in the scanning tunneling microscope are calculated using the many-body GW approximation. The…
Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of…
We report the results of a cryogenic study of the modification of YBa2Cu3O7-delta surface electronic properties with the probe of a scanning tunneling microscope (STM). A negative voltage applied to the sample during STM tunneling is found…
The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This…
The Scanning Tunneling Microscope (STM) is a powerful instrument to study electronic density of states at surfaces down to atomic scale. Many interesting samples require studying variations as a function of the magnetic field, which is most…
Many-body phenomena are ubiquitous in solids, as electrons interact with one another and the many excitations arising from lattice, magnetic, and electronic degrees of freedom. These interactions can subtly influence the electronic…
In the last decade, detecting spin dynamics at the atomic scale has been enabled by combining techniques like electron spin resonance (ESR) or pump-probe spectroscopy with scanning tunneling microscopy (STM). Here, we demonstrate an…
Andreev bound states (ABS) at the surface of superconductors are expected for any pair potential showing a sign change in different k-directions with their spectral weight depending on the relative orientation of the surface and the pair…
Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a…
Scanning tunneling microscopy (STM) provides real-space electronic state information at the atomic scale that is most commonly used to study materials surfaces. An intriguing extension of the method is attempt to study the electronic…
Scanning tunneling spectroscopy (STS) allows to image single molecules decoupled from the supporting substrate. The obtained images are routinely interpreted as the square moduli of molecular orbitals, dressed by the mean-field…
The electron reflection amplitude $R$ at stacking-fault (SF) induced fractional steps is determined for Ag(111) surface states using a low temperature scanning tunneling microscope. Unexpectedly, $R$ remains as high as $0.6 \sim 0.8$ as…