相关论文: Quantum spin field effect transistor

In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…

Coherent rotations of single spin-based qubits may be accomplished electrically at fixed Zeeman energy with a qubit defined solely within a single electrostatically-defined quantum dot; the $g$-factor and the external magnetic field are…

Spin and charge currents can be generated by an ac voltage through a one-channel quantum wire with strong electron interactions in a static uniform magnetic field. In a certain range of low voltages, the spin current can grow as a negative…

While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…

Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic…

The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic…

Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing…

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…

The electron transmission $T$ is evaluated through waveguides, in which the strength of the spin-orbit interaction(SOI) $\alpha$ is varied periodically, using the transfer-matrix technique. It is shown that $T$ exhibits a {\it…

The quantum spin Hall effect is conventionally thought to require a strong spin-orbit coupling, producing an effective spin-dependent magnetic field. However, spin currents can also be present without transport of spins, for example, in…

Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…

Pure spin current is a powerful tool for manipulating spintronic devices, and its dynamical behavior is an important issue. By using mesoscopic transport theory for electron tunneling induced by spin accumulation, we investigate the…

We propose a quantum interference spin-injector nanodevice consisting of a superconductor-normal metal hybrid loop connected to a superconductor-ferromagnet bilayer via a tunneling junction. We show that for certain values of the applied…

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…

A superconducting qubit coupled to an open transmission line represents an implementation of the spin-boson model with a broadband environment. We show that this environment can be engineered by introducing partial reflectors into the…

We describe the dynamics of an antiferromagnetic nano-oscillator in an external magnetic field of any given time distribution. The oscillator is powered by a spin current originating from spin-orbit effects in a neighboring heavy metal…

We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…