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相关论文: Ferromagnetism in Cr-doped GaN: A First Principles…

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A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the…

强关联电子 · 物理学 2009-11-11 S. Yoshii , S. Sonoda , T. Yamamoto , T. Kashiwagi , M. Hagiwara , Y. Yamamoto , Y. Akasaka , K. Kindo , H. Hori

Recently d0 or intrinsic ferromagnetism was believed to provide an alternative pathway to transition metal induced ferromagnetism in oxide. In pursuit of augmenting the area of d0 ferromagnetism; we have undertaken to study the crystal…

材料科学 · 物理学 2020-11-30 L. Chouhan , G. Bouzerar , S. K. Srivastava

We report room temperature ferromagnetism in as-implanted Eu doped ZnO (ZnO:Eu). To address the origin of ferromagnetism ab initio calculations of ZnO:Eu system are performed. Results show that the ferromagnetism is induced by ZnO point…

材料科学 · 物理学 2010-06-22 M. H. N. Assadi , Y. B. Zhang , M. Ionescu , P. Photongkam , S. Li

Recent experiments on Mn-doped ZnS nanocrystals have shown unusual magnetization properties. We describe a nearest-neighbor Heisenberg exchange model for calculating the magnetization ratios of these antiferromagnetically doped crystals, in…

凝聚态物理 · 物理学 2007-05-23 Joshua Schrier , K. Birgitta Whaley

The role of Cr incorporation into the ZnO were probed through investigations into the structural, optical and magnetic properties. Zn1-xCrxO with x = 0, 0.01, 0.03 and 0.05, nanoparticles were prepared by solution combustion method. Powder…

材料科学 · 物理学 2021-11-16 H. S. Lokesha , P. Mohanty , A. R. E. Prinsloo , C. J. Sheppard

Density functional theory with local spin density approximation has been used to propose possible room temperature ferromagnetism in N-doped NaCl-type BaO. Pristine BaO is a wide bandgap semiconductor, however, N induces a large density of…

材料科学 · 物理学 2015-05-05 Gul Rahman

While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga_(1-x)Mn_(x)As, doped semiconductors without magnetic ions have not shown evidence for ferromagnetism. Using a generalized disordered…

强关联电子 · 物理学 2009-11-13 Erik Nielsen , R. N. Bhatt

We present results of a numerical analysis of magnon spectra in supercells simulating two-dimensional and bulk random diluted ferromagnets with long-ranged pair exchange interactions. We show that low-energy spectral regions for these…

材料科学 · 物理学 2016-12-02 Ilja Turek , Josef Kudrnovsky , Vaclav Drchal

A complex structural, magnetic and electric transport investigation shows that the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3 provokes a non-uniform magnetic state with coexisting FM and AFM regions. Irrespective…

材料科学 · 物理学 2010-07-30 Z. Jirak , J. Hejtmanek , K. Knizek , M. Marysko , C. Martin , A. Maignan , M. Hervieu

The electron doped manganite system, Bi0.125Ca0.875MnO3, exhibits large bulk magnetization of unknown origin. To select amongst possible magnetic ordering models, we have conducted temperature and magnetic field dependent small-angle…

材料科学 · 物理学 2009-11-13 Yuhai Qin , Trevor A. Tyson , Klaus Pranzas , Helmut Eckerlebe

A brief review of theory of ferromagnetism of dilute magnetic semiconductors of the form (A,Mn)B based on the double exchange model is first given. A systematic investigation of the phenomena extending the current theory is outlined. We…

强关联电子 · 物理学 2017-02-08 A. K. Rajagopal , Mogus Mochena , P. J. Lin-Chung

CdGeP2 chalcopyrites doped with Mn have been recently found to exhibit room temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d^5)…

强关联电子 · 物理学 2009-11-07 Priya Mahadevan , Alex Zunger

Using {\it ab initio} total energy density-functional theory calculations, we investigate the electronic, structural and magnetic properties of Manganese doped Germanium nanowires. The nanowires have been constructed along the [110]…

材料科学 · 物理学 2016-08-16 J. T. Arantes , Antônio J. R. da Silva , A. Fazzio

Zn1-xRxO (R = Li, Mg, Cr, Mn, Fe and Cd) were obtained by using co-precipitation synthesis technique with constant weight percent of 3% from R ions. The phase composition, crystal structure, morphology, Density Functional Theory (DFT), and,…

材料科学 · 物理学 2021-10-26 T. A. Abdel-Baset , M. Abdel-Hafiez

We propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a $\delta$-doped layer of Mn in Si, using \textit{ab initio} electronic-structure methods. We find that (i) ferromagnetic order of the…

材料科学 · 物理学 2009-11-11 M. C. Qian , C. Y. Fong , Kai Liu , Warren E. Pickett , J. E. Pask , L. H. Yang

In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence…

强关联电子 · 物理学 2015-05-13 Erik Nielsen , R. N. Bhatt

Motivated by the recent experimental observation of long range ferromagnetic order at a relatively high temperature of 200K in the Fe-doped ZnGa$_2$O$_4$ semiconducting spinel, we propose a possible mechanism for the observed ferromagnetism…

强关联电子 · 物理学 2016-08-16 Tulika Maitra , Roser Valentí

We have verified that the variational mean field theory approach suggested by Narimanov and Varma (preprint cond-mat/0002191) being applied to the realistic two-band model provides a good agreement with experimental data for the Curie…

强关联电子 · 物理学 2009-10-31 M. O. Dzero

Half-metallic ferromagnetism (FM) in single-crystal Ba{0.39(1)}Rb{0.61(1)}Mn2As2 below its Curie temperature TC = 103(2) K is reported. The magnetization M versus applied magnetic field H isotherm data at 1.8 K show complete polarization of…

强关联电子 · 物理学 2015-12-08 Abhishek Pandey , D. C. Johnston

We find new ferromagnetic semiconductors, Cr-doped BaZn2As2, by employing a combined method of the density functional theory and the quantum Monte Carlo simulation. Due to a narrow band gap of 0.2 eV in host BaZn2As2 and the different…

材料科学 · 物理学 2016-12-26 Bo Gu , Sadamichi Maekawa