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Variations in the band structures of C60-polymers are studied, when pi-conjugation conditions are changed. We look at band structures in order to discuss a metal-insulator transition, using a semi-empirical model with the…

chem-ph · 物理学 2008-02-03 Kikuo Harigaya

Variations in the band structures of the two-dimensional C60-polymers are studied, when pi-conjugation conditions are changed. We investigate the rectangular and triangular polymers, in order to discuss metal-insulator transitions, using a…

凝聚态物理 · 物理学 2007-05-23 Kikuo Harigaya

We have performed local STM studies on potassium-doped C60 (KxC60) monolayers over a wide regime of the phase diagram. As K content increases from x = 3 to 5, KxC60 monolayers undergo metal-insulator-metal reentrant phase transitions and…

材料科学 · 物理学 2009-11-13 Yayu Wang , R. Yamachika , A. Wachowiak , M. Grobis , K. H. Khoo , D. H. Lee , Steven G. Louie , M. F. Crommie

We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…

强关联电子 · 物理学 2007-05-23 G. I. Japaridze , R. M. Noack , D. Baeriswyl

The metal-semiconductor transition of peanut-shaped fullerene (C$_{60}$) polymers is clarified by considering the electron-phonon coupling in the uneven structure of the polymers. We established a theory that accounts for the transition…

介观与纳米尺度物理 · 物理学 2015-05-27 Shota Ono , Hiroyuki Shima

Optical measurements on doped C$_{60}$ films provide evidence for a transition from a high temperature conducting phase to a low temperature insulating phase in quenched Rb$_1$C$_{60}$ and K$_1$C$_{60}$ compounds, while Cs$_1$C$_{60}$ did…

凝聚态物理 · 物理学 2007-05-23 Daniel Koller , Michael C. Martin , Laszlo Mihaly

The KC60 and RbC60 polymer phases exhibit contrasting electronic properties while powder diffraction studies have revealed no definite structural difference. We have performed single crystal X-ray diffraction and diffuse scattering studies…

凝聚态物理 · 物理学 2009-10-31 P. Launois , R. Moret , J. Hone , A. Zettl

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…

强关联电子 · 物理学 2009-10-31 Junren Shi , X. C. Xie

Variations in the band structures of C60-polymers are studied, when conjugation conditions and the electron number are changed. We use a semiempirical model with the Su-Schrieffer-Heeger type electron-phonon interactions. In the neutral…

材料科学 · 物理学 2016-08-31 Kikuo Harigaya

We consider the coupling between an external electric field and dissociated ions embedded in anisotropic polarizable media such as block copolymers. We argue that the presence of such ions can induce strong morphological changes and even…

软凝聚态物质 · 物理学 2009-11-07 Yoav Tsori , Francois Tournilhac , David Andelman , Ludwik Leibler

We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the…

介观与纳米尺度物理 · 物理学 2009-10-31 S. C. Dultz , H. W. Jiang

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

强关联电子 · 物理学 2019-04-12 Shiqi Li , Qing Zhang , Pouyan Ghaemi , M. P. Sarachik

A structural phase transition has been found using electron diffraction technique in PrRu4P12 accompanied by a metal - insulator (M - I) transition (TMI = 60K). Weak superlattice spots appeared at (H, K, L) (H + K + L = 2n + 1; n is an…

强关联电子 · 物理学 2009-10-31 C. H. Lee , H. Matsuhata , A. Yamamoto , T. Ohta , H. Takazawa , K. Ueno , C. Sekine , I. Shirotani , T. Hirayama

We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…

强关联电子 · 物理学 2009-10-31 J. S. Thakur , D. Neilson

Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room…

介观与纳米尺度物理 · 物理学 2009-04-16 Aaron Bostwick , Jessica L. McChesney , Konstantin Emtsev , Thomas Seyller , Karsten Horn , Stephan D. Kevan , Eli Rotenberg

Substitution of rare-earth ions for Ca in Bi2Sr2CaCu2O8+y is known to cause a metal-insulator transition. Using resonant photoemission we study how this chemical substitution affects the electronic structure of the material. For the partial…

凝聚态物理 · 物理学 2009-10-28 C. Quitmann , B. Beschoten , R. J. Kelley , G. Guentherodt , M. Onellion

Within dynamical mean-field theory, we study the metal-insulator transition of a twofold orbitally degenerate Hubbard model as a function of a splitting \Delta of the degeneracy. The phase diagram in the U-\Delta plane exhibits two-band and…

强关联电子 · 物理学 2009-11-07 Nicola Manini , Giuseppe E. Santoro , Andrea Dal Corso , Erio Tosatti

We show that Rb_4C_60 transforms from its ambient pressure orientationally disordered tetragonal structure to an ordered orthorhombic structure (isostructural to Cs_4C_60) at or above 0.4 GPa. This opens the possibility of studying the…

强关联电子 · 物理学 2007-05-23 Ashfia Huq , Peter W. Stephens

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

Multilayer (TiO$_2$)$_m$/(VO$_2$)$_n$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) show a metal-insulator transition with respect to the VO$_2$ layer thickness in first principles calculations. For $n$ $\geq$ 5…

强关联电子 · 物理学 2015-05-14 Victor Pardo , Warren E. Pickett
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