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相关论文: Kondo Effect in Carbon Nanotube Single-Electron Tr…

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Magnetic impurity effects in carbon nanotubes are studied theoretically. The multi channel Kondo effect is investigated with the band structure of the metallic nanotubes. The local non-Fermi liquid behavior is realized at temperatures lower…

凝聚态物理 · 物理学 2007-05-23 K. Harigaya

Magnetic impurity effects on metallic carbon nanotubes are studied theoretically. The resolvent method for the multi channel Kondo effect is applied to the band structure of the kp perturbation hamiltonian in the limit of the infinite…

材料科学 · 物理学 2016-08-31 Kikuo Harigaya

The connection of electrical leads to wire-like molecules is a logical step in the development of molecular electronics, but also allows studies of fundamental physics. For example, metallic carbon nanotubes are quantum wires that have been…

介观与纳米尺度物理 · 物理学 2009-10-31 Jesper Nygard , David Henry Cobden , Poul Erik Lindelof

We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit…

介观与纳米尺度物理 · 物理学 2009-10-31 W. G. van der Wiel , S. De Franceschi , T. Fujisawa , J. M. Elzerman , S. Tarucha , L. P. Kouwenhoven

In a single-walled carbon nanotube, we observe the spin-1/2 Kondo effect. The energy of spin-resolved Kondo peaks is proportional to magnetic field at high fields, contrary to recent reports. At lower fields, the energy falls below this…

介观与纳米尺度物理 · 物理学 2007-05-23 C. H. L. Quay , John Cumings , Sara Gamble , R. de Picciotto , H. Kataura , D. Goldhaber-Gordon

The Kondo-effect is a many-body phenomenon arising due to conduction electrons scattering off a localized spin. Coherent spin-flip scattering off such a quantum impurity correlates the conduction electrons and at low temperature this leads…

强关联电子 · 物理学 2007-05-23 J. Paaske , A. Rosch , P. Woelfle , N. Mason , C. M. Marcus , J. Nygard

Progress in the fabrication of nanometer-scale electronic devices is opening new opportunities to uncover the deepest aspects of the Kondo effect, one of the paradigmatic phenomena in the physics of strongly correlated electrons. Artificial…

We study the Kondo effect in a single-electron transistor device realized in a single-wall carbon nanotube. The K-K' double orbital degeneracy of a nanotube, which originates from the peculiar two-dimensional band structure of graphene,…

介观与纳米尺度物理 · 物理学 2009-11-11 Jong Soo Lim , Mahn-Soo Choi , M. Y. Choi , Rosa Lopez , Ramon Aguado

We present low-temperature electron transport measurements on a single-wall carbon nanotube quantum dot exhibiting Kondo resonances at low temperature. Contrary to the usual behavior for the spin-1/2 Kondo effect we find that the…

介观与纳米尺度物理 · 物理学 2016-08-31 J. Nygard , W. F. Koehl , N. Mason , L. DiCarlo , C. M. Marcus

We have used an electromigration technique to fabricate C$_{60}$-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , D. Natelson

We demonstrate a tunable Kondo effect realized in small quantum dots. We can switch our dot from a Kondo impurity to a non-Kondo system as the number of electrons on the dot is changed from odd to even. We show that the Kondo temperature…

介观与纳米尺度物理 · 物理学 2009-10-31 Sara M. Cronenwett , Tjerk H. Oosterkamp , Leo P. Kouwenhoven

We study the Kondo effect in a CNT(left lead)-CNT(QD)-CNT(right lead) structure. Here CNT is a single-wall metallic carbon nanotube, for which 1) the valence and conduction bands of electrons with zero orbital angular momentum ($m=0$)…

强关联电子 · 物理学 2014-05-14 Igor Kuzmenko , Yshai Avishai

The effect of magnetic impurities on the ballistic conductance of nanocontacts is, as suggested in recent work, amenable to ab initio study \cite{naturemat}. Our method proceeds via a conventional density functional calculation of spin and…

强关联电子 · 物理学 2012-01-17 P. P. Baruselli , A. Smogunov , M. Fabrizio , E. Tosatti

The current emission noise of a carbon nanotube quantum dot in the Kondo regime is measured at frequencies $\nu$ of the order or higher than the frequency associated with the Kondo effect $k_B T_K/h$, with $T_K$ the Kondo temperature. The…

介观与纳米尺度物理 · 物理学 2012-01-30 Julien Basset , Alik Kasumov , Pascu Moca , Gergely Zarand , Pascal Simon , Helene Bouchiat , Richard Deblock

By introducing a normal self-energy to incorporate the effects of magnetic impurities, Kondo effects in single-walled metallic carbon nanotubes are investigated within the Anderson model and Landauer formula. Magnetic impurities induce…

介观与纳米尺度物理 · 物理学 2007-05-23 Fufang Xu , Jia-Lin Zhu

We study the interplay between Coulomb blockade and the Kondo effect in quantum dots. We use a self-consistent scheme which describes mesoscopic devices in terms of a collective phase variable (slave rotor) and quasiparticle degrees of…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Florens , P. San Jose , F. Guinea , A. Georges

Over-screened Kondo effect is feasible in carbon nanotube quantum dot junction hosting a spin $\tfrac{1}{2}$ atom with single $s$-wave valence electron (e.g Au). The idea is to use the two valleys as two symmetry protected flavor quantum…

强关联电子 · 物理学 2014-08-22 Igor Kuzmenko , Tetyana Kuzmenko , Yshai Avishai

The charging of a quantum box, coupled to a lead by tunneling through a single resonant level, is studied near the degeneracy points of the Coulomb blockade. Combining Wilson's numerical renormalization-group method with perturbative…

强关联电子 · 物理学 2007-05-23 Eran Lebanon , Avraham Schiller , Frithjof B. Anders

High quality single wall carbon nanotube quantum dots have been made showing both metallic and semiconducting behavior. Some of the devices are identified as small band gap semiconducting nanotubes with relatively high broad conductance…

介观与纳米尺度物理 · 物理学 2007-11-14 K. Grove-Rasmussen , H. I. Jørgensen , P. E. Lindelof

Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…

介观与纳米尺度物理 · 物理学 2007-05-23 Levente J. Klein , Donald E. Savage , Mark A. Eriksson
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