相关论文: Tunneling-assisted impact ionization fronts in sem…
Resonant Raman excitation by ultrafast vacuum ultraviolet laser pulses is a powerful means to study electron dynamics in molecules, but experiments must contend with linear background ionization: frequencies high enough to reach resonant…
A high energy density plasma embedded in a neutral gas is able to launch an outward-propagating nonlinear electrostatic ionization wave that traps energetic electrons. The trapping maintains a strong sheath electric field, enabling rapid…
We investigate dissociative single and double ionization of HeH+ induced by intense femtosecond laser pulses. By employing a semi-classical model with nuclear trajectories moving on field-dressed surfaces and ionization events treated as…
Tunneling ionization is one of the fundamental electron dynamics, which has wide applications in ultrafast physics. When frustrated tunneling ionization (FTI) is considered, the tunneling rate is not equivalent to ionization rate. However,…
Charged particles can be accelerated to high energies by collisionless shock waves in astrophysical environments, such as supernova remnants. By interacting with the magnetized ambient medium, these shocks can transfer energy to particles.…
Recent ionospheric modification experiments with the 3.6 MW transmitter at the High Frequency Active Auroral Research Program (HAARP) facility in Alaska led to discovery of artificial ionization descending from the nominal interaction…
We investigate the physical processes in which an electron, upon return to its parent ion, promotes a second electron to an excited state, from which it subsequently tunnels. Employing the strong-field approximation and saddle-point…
The process of ionization of a hydrogen atom by a short infrared laser pulse is studied in the regime of very large pulse intensity, in the dipole approximation. Let $A$ denote the integral of the electric field of the pulse over time at…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…
The conventional approach to perform two-qubit gate operations in trapped ions relies on exciting the ions on motional sidebands with laser light, which is an inherently slow process. One way to implement a fast entangling gate protocol…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…
We propose two new approaches for regulating spin polarization and spin inversion in a conducting junction within a tight-binding framework based on wave-guide theory. The system comprises a magnetic quantum ring with finite modulation in…
The acceleration of protons and electrons in a reconnecting current sheet (RCS) is simulated with a particle-in-cell (PIC) 2D3V code for the proton-to-electron mass ratio of 100. The electro-magnetic configuration forming the RCS…
Microcavity plasma arrays of inverse pyramidal cavities have been fabricated in p-Si wafers. Each cavity acts as a microscopic dielectric barrier discharge. Operated at atmospheric pressure in argon and excited with high voltage at about 10…
Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin…
Collisionless shocks are efficient particle accelerators. At Earth, ions with energies exceeding 100 keV are seen upstream of the bow shock when the magnetic geometry is quasi-parallel, and large-scale supernova remnant shocks can…
Calculations on the dynamics of ions and electrons in near-infrared laser fields at intensities up to $3 \times 10^{23}$ W/cm$^2$ are presented. We explore the acceleration of ions in a laser focus by conservation of canonical momentum…
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems…
We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant…
A 2D approach is used to simulate the properties of positive and negative streamers emerging from a high-voltage electrode in a long (14 cm) air gap for standard pressure and temperature. The applied voltage varies from 100 to 500 kV. To…