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相关论文: Excitons in Mott insulators

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Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in…

强关联电子 · 物理学 2024-04-23 T. -S. Huang , C. L. Baldwin , M. Hafezi , V. Galitski

We develop a systematic theory for excitons subject to Fermi-Hubbard physics in moir\'e twisted transition metal dichalcogenides (TMDs). Specifically, we consider excitons in moir\'e systems for which the valence band is in the…

强关联电子 · 物理学 2023-06-07 T. -S. Huang , Yang-Zhi Chou , C. L. Baldwin , Fengcheng Wu , Mohammad Hafezi

We employ dynamical density-matrix renormalization group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is…

强关联电子 · 物理学 2009-11-07 F. H. L. Essler , F. Gebhard , E. Jeckelmann

The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…

Two-dimensional Mott insulators host antiferromagnetic (AFM) correlations that are predicted to enhance the attractive interaction between empty (holons) and doubly occupied (doublons) sites, creating a novel pathway for exciton formation.…

强关联电子 · 物理学 2025-05-12 Omar Mehio , Yuchen Han , Xinwei Li , Honglie Ning , Zach Porter , Stephen D. Wilson , David Hsieh

We studied the possibility of exciton condensation in Mott insulating bilayers. In these strongly correlated systems an exciton is the bound state of a double occupied and empty site. In the strong coupling limit the exciton acts as a…

强关联电子 · 物理学 2014-01-01 Louk Rademaker , Jeroen van den Brink , Jan Zaanen , Hans Hilgenkamp

We study the conditions to realize an excitonic condensed phase in an electron-hole bilayer system with local Hubbard-like interactions at half-filling, where we can address the interplay with Mott localization. Using Dynamical Mean-Field…

强关联电子 · 物理学 2025-12-15 Samuele Giuli , Adriano Amaricci , Massimo Capone

Significant efforts have been dedicated to achieving excitonic insulators. In this paper, we explore a new problem of doping excitons into a Mott insulator instead of a band insulator. Specifically, we start with a Mott insulator on a…

强关联电子 · 物理学 2024-07-16 Hui Yang , Ya-Hui Zhang

The photoexcitation of a Mott insulator on a square lattice weakens the intensity of both single- and two-magnon excitations as observed in time-resolved resonant-inelastic X-ray scattering and time-resolved Raman scattering, respectively.…

强关联电子 · 物理学 2023-03-10 Kenji Tsutsui , Kazuya Shinjo , Shigetoshi Sota , Takami Tohyama

In condensed-matter physics, electronic Mott insulators have triggered considerable research due to their intricate relation with high-temperature superconductors. However, unlike atomic systems for which Mott phases were recently shown for…

量子气体 · 物理学 2022-03-09 Camille Lagoin , Stephan Suffit , Kirk Baldwin , Loren Pfeiffer , Francois Dubin

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model…

强关联电子 · 物理学 2018-06-07 Julian Rincon , Elbio Dagotto , Adrian E. Feiguin

Surprising properties of doped Mott insulators are at the heart of many quantum materials, including transition metal oxides and organic materials. The key to unraveling complex phenomena observed in these systems lies in understanding the…

强关联电子 · 物理学 2018-12-05 Fabian Grusdt , Zheng Zhu , Tao Shi , Eugene Demler

Hubbard excitons are bound states of doublons and holes that can be experimentally probed both in real materials, such as cuprates, and in cold atom quantum simulators. Here we compare properties of a Hubbard exciton to those of a pair of…

强关联电子 · 物理学 2024-06-25 Annabelle Bohrdt , Eugene Demler , Fabian Grusdt

Excitonic insulators are usually considered to form via the condensation of a soft charge mode of bound electron-hole pairs. This, however, presumes that the soft exciton is of spin-singlet character. Early theoretical considerations have…

To study excitonic effects on high-harmonic generation (HHG) in Mott insulators, we investigate pumped nonequilibrium dynamics in the one-dimensional extended Hubbard model. By employing time-dependent calculations based on the exact…

强关联电子 · 物理学 2022-06-14 Mina Udono , Koudai Sugimoto , Tatsuya Kaneko , Yukinori Ohta

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva

We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters,…

强关联电子 · 物理学 2007-05-23 T. Tohyama , H. Onodera , K. Tsutsui , S. Maekawa

Optical excitations in moir\'e transition metal dichalcogenide bilayers lead to the creation of excitons, as electron-hole bound states, that are generically considered within a Bose-Hubbard framework. Here, we demonstrate that these…

介观与纳米尺度物理 · 物理学 2024-05-03 Tsung-Sheng Huang , Peter Lunts , Mohammad Hafezi

The emergence of quasiparticles in quantum many-body systems underlies the rich phenomenology in many strongly interacting materials. In the context of doped Mott insulators, magnetic polarons are quasiparticles that usually arise from an…

量子气体 · 物理学 2025-02-12 Max L. Prichard , Benjamin M. Spar , Ivan Morera , Eugene Demler , Zoe Z. Yan , Waseem S. Bakr

We investigate the effect of nonlocal interactions on the photo-doped Mott insulating state of the two-dimensional Hubbard model using a nonequilibrium generalization of the dynamical cluster approximation. In particular, we compare the…

强关联电子 · 物理学 2020-02-26 Nikolaj Bittner , Denis Golez , Martin Eckstein , Philipp Werner
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