相关论文: Spin Torques in Ferromagnetic/Normal Metal Structu…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
We present a phenomenological theory of spin-orbit torques in a metallic ferromagnet with spin-relaxing boundaries. The model is rooted in the coupled diffusion of charge and spin in the bulk of the ferromagnet, where we account for the…
Detection of current-induced spin accumulation via ferromagnetic contacts is discussed. Onsager's relations forbid that in a two-probe configuration spins excited by currents in time-reversal symmetric systems can be detected by switching…
Magnetism and transport are two key functional ingredients in modern electronic devices. In oxide heterostructures, ferroelectricity can provide a new route to control these two properties via electrical operations, which is scientifically…
Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another…
We calculate the spin-transfer torque in Fe/MgO/Fe tunnel junctions and compare the results to those for all-metallic junctions. We show that the spin-transfer torque is interfacial in the ferromagnetic layer to a greater degree than in…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…
Using one of the methods of quantum nonequilibrium statistical physics we have investigated the spin transport transverse to the normal metal/ferromagnetic insulator interface in hybrid nanostructures. An approximation of the effective…
Spin relaxation torque ${\cal T}$ in uniform metallic ferromagnets with the spin-orbit interaction arising from random impurities is calculated microscopically. ${\cal T}$ is shown to be written by spatial derivatives of the electric field,…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…
We investigate the domain wall dynamics of a ferromagnetic wire under the combined influence of a spin-polarized current and magnonic spin-transfer torque generated by an external field, taking also into account Rashba spin-orbit coupling…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…
The spin current can result in a spin-transfer torque in the normal-metal(NM)|ferromagnetic-insulator(FMI) or normal-metal(NM)|ferromagnetic-metal(FMM) bilayer. In the earlier study on this issue, the spin relaxations were ignored or…
We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
We study the dynamics of spin valves consisting of two layers of magnetic insulators separated by a normal metal in the macrospin model. A current through the spacer generates a spin Hall current that can actuate the magnetization via the…