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相关论文: Free carrier effects in gallium nitride epilayers:…

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Using cyclotron resonance, we measure the effective mass, $m$*, of electrons in AlGaN/GaN heterostructures with densities, $n_{2D}\sim 1-6\times10^{12}$cm$^{-2}$. From our extensive data, we extrapolate a band edge mass of $(0.208\pm0.002)…

凝聚态物理 · 物理学 2009-11-10 S. Syed , J. B. Heroux , Y. J. Wang , M. J. Manfra , R. J. Molnar , H. L. Stormer

A re-ordered valence band in GaN/AlGaN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g-factor in magneto-luminescence spectra in fields up to 55 T. This has been caused by a…

凝聚态物理 · 物理学 2009-11-07 P. A. Shields , R. J. Nicholas , N. Grandjean , J. Massies

After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron…

强关联电子 · 物理学 2014-07-29 I. Di Marco , P. Thunström , M. I. Katsnelson , J. Sadowski , K. Karlsson , S. Lebègue , J. Kanski , O. Eriksson

Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the…

计算物理 · 物理学 2014-03-18 Xihong Peng , Fu Tang , Paul Logan

The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band dispersion along various directions of the GaTe Brillouin…

This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases…

The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for…

材料科学 · 物理学 2016-09-21 V. P. Zhukov , V. G. Tyuterev , P. M. Echenique , E. V. Chulkov

Atomically precise armchair graphene nanoribbons of width $N=7$ (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). The analysis of energy-dependent standing wave patterns of finite length ribbons allows, by…

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…

The structural and electronic properties of cubic GaN are studied within the local density approximation by the full-potential linear muffin-tin orbitals method. The Ga $3d$ electrons are treated as band states, and no shape approximation…

凝聚态物理 · 物理学 2009-10-22 Vincenzo Fiorentini , Michael Methfessel , Matthias Scheffler

Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…

介观与纳米尺度物理 · 物理学 2009-11-13 Neophytos Neophytou , Abhijeet Paul , Gerhard Klimeck

The nitrogen-vacancy (NV) center occurs in GaAs bulk crystals doped or implanted with nitrogen. The local vibration of nitrogen gives rise to a sharp infrared absorption band at 638 cm$^{-1}$, exhibiting a fine structure due to the…

材料科学 · 物理学 2018-02-07 Nicola Kovač , Christopher Künneth , Hans Christian Alt

Contrary to the conventional empirical law, band gap of dilute nitride semiconductors decreases with nitrogen concentration. In spite of a number of investigations, origin of this "large band gap bowing", is still under debate. In order to…

材料科学 · 物理学 2016-02-17 Masato Morifuji , Fumitaro Ishikawa

We study the influence of the quantum geometry on the magnetic responses of quadratic band crossing semimetals. More explicitly, we examine the Landau levels, quantum Hall effect, and magnetic susceptibility of a general two-band…

介观与纳米尺度物理 · 物理学 2024-11-18 Chang-geun Oh , Jun-Won Rhim , Bohm-Jung Yang

Graphene nanoribbons (GNR) in mutually perpendicular electric and magnetic fields are shown to exhibit dramatic changes in their band structure and electron transport properties. A strong electric field across the ribbon induces multiple…

材料科学 · 物理学 2015-05-18 Oleksiy Roslyak , Godfrey Gumbs , Danhong Huang

We studied the diffusion coefficient of hot electrons of GaN crystals in moderate electric (1...10 kV/cm) and magnetic (1...4 T) fields. Two configurations, parallel and crossed fields, are analysed. The study was carried out for…

材料科学 · 物理学 2019-04-19 G. I. Syngayivska , V. V. Korotyeyev , V. A. Kochelap

We study the electron-magnon scattering in bulk Fe, Co, and Ni within the framework of many-body perturbation theory implemented in the full-potential linearized augmented-plane-wave method. To this end, a $\mathbf{k}$-dependent self-energy…

强关联电子 · 物理学 2019-07-31 Mathias C. T. D. Müller , Stefan Blügel , Christoph Friedrich

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion…

材料科学 · 物理学 2012-09-14 Héctor Ochoa , Eduardo V. Castro , M. I. Katsnelson , F. Guinea

We analyze the dispersion relation for an anisotropic gravity-electromagnetic theory at very high energies. In particular for photons of very high energy. We start by introducing the anisotropic gravity-gauge vector field model. It is…

高能物理 - 理论 · 物理学 2023-10-18 Jarvin Mestra-Páez , Álvaro Restuccia , Francisco Tello-Ortiz
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