相关论文: Experimental Evidence for a Spin-Polarized Ground …
We consider the issue of the appropriate underlying wavefunction describing the enigmatic 5/2 fractional quantum Hall effect (FQHE), the only even denominator FQHE unambiguously observed in a single layer two dimensional (2D) electron…
We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $\nu$=5/2 in a very high mobility specimen of $\mu=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron…
The spin-polarized even-denominator fractional quantum Hall (FQH) states in the second Landau level (LL), i.e. 5/2 and 7/2, may possess novel quasi-particle excitations obeying non-Abelian statistics. However, the spin polarization of the…
The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum…
We investigate, using finite size numerical calculations, the spin-polarized fractional quantum Hall effect (FQHE) in the first excited Landau level (LL). We find evidence for the existence of an incompressible state at $\nu = \frac{7}{3} =…
We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and…
We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…
We have observed in a low density two-dimensional hole system (2DHS) of extremely high quality (with hole density p=1.6x10^{10} cm^{-2} and mobility \mu=0.8x10^6 cm^2/Vs) that, as the 2DHS is continuously tilted with respect to the…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary…
Quantum Hall states at filling fraction $\nu$=5/2 are examined by numerical diagonalization. Spin-polarized and -unpolarized states of systems with $N\le 18$ electrons are studied, neglecting effects of Landau level mixing. We find that the…
We report a theoretical analysis of the half-polarized quantum Hall states observed in a recent experiment. Our numerical results indicate that the ground state energy of the quantum Hall $\nu= 2/3$ and $\nu= 2/5$ states versus spin…
Fascinating structures have arisen from the study of the fractional quantum Hall effect (FQHE) at the even denominator fraction of $5/2$. We consider the FQHE at another even denominator fraction, namely $\nu=2+3/8$, where a well-developed…
The present theory has investigated the FQHE without any quasi-particle. The electric field due to the Hall voltage is taken into consideration. We find the ground state where the electron configuration is uniquely determined so as to have…
The origin of fractional quantum Hall effect (FQHE) at 4/11 and 5/13 has remained controversial. We make a compelling case that FQHE is possible here for fully spin polarized composite fermions, but with an unconventional underlying…
We report on our theoretical investigations that point to the possibility of a fractional quantum Hall effect with partial spin polarization at $\nu=3/8$. The physics of the incompressible state proposed here involves p-wave pairing of…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…