相关论文: Electronic correlation effects and the Coulomb gap…
Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to…
The temperature dependence of the electrical resistivity in insulator systems with a Coulomb gap in the density of states is expressed by a very simple function which coincides with the Efros-Shklovskii T^(-1/2)result, at temperatures lower…
We study variable range hopping in the quantum Hall effect regime in the presence of a metallic gate parallel to the plane of a two-dimensional electron gas. Screening of the Coulomb interaction by the gate causes the partial ``filling'' of…
Electronic transport properties of the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state…
Tunneling of electrons traversing a few-electron quantum dot is strongly influenced by the Coulomb interaction leading to Coulomb blockade effects and single-electron tunneling. We present calculations which demonstrate that correlations…
We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random…
We study Coulomb drag in a pair of parallel one-dimensional electron systems within the framework of the Tomanaga-Luttinger model. We find that Coulomb coupling has a much stronger effect on one dimensional wires than on two-dimensional…
The theoretical model of the short-range interacting Luttinger liquid predicts a power-law scaling of the density of states and the momentum distribution function around the Fermi surface, which can be readily tested through tunneling…
We study the influence of Coulomb interaction on the thermoelectric transport coefficients for a metallic single-electron transistor. By performing a perturbation expansion up to second order in the tunnel-barrier conductance, we include…
We analyze the effects of the local Coulomb interaction on a topological band insulator (TBI) by applying the dynamical mean field theory to a generalized Bernevig-Hughes-Zhang model having electron correlations. It is elucidated how the…
We consider a system of two-dimensional electrons strongly localized by disorder. Interactions create a gap in the average tunneling density of states $\nu(E)$ at energies, E, close to the Fermi level. We derive a system of self-consistent…
We study the Coulomb drag effect in double layer electronic systems with local tunneling links. The possibility of tunneling between the layers leads to a pronounced exchange contribution to the transconductance, which is negative and…
Electron tunneling measurements of the density of states (DOS) in ultra-thin Be films reveal that a correlation gap mediates their insulating behavior. In films with sheet resistance $R<5000\Omega$ the correlation singularity appears as the…
A model of strongly disordered lattice system with long-range Coulomb interactions between localized charge carriers has been considered. The total electronic energy is characterized by the presence of multiple metastable minima (including…
The variable range hopping results for noninteracting electrons of Mott and Shklovskii are generalized to 1D disordered charge density waves and Luttinger liquids using an instanton approach. Following a recent paper by Nattermann,…
We demonstrate that forward electron-electron scattering due to Coulomb interation in a two-dimensional ballistic electron gas leads to the (T\ln {T})^{-1} temperature dependence of the thermal conductivity, which is logarithmically…
We study the transport through two impurities or ``barriers'' in a one-dimensional quantum wire, taking into account the long-range $\frac1r$ Coulomb interactions. We compute the temperature-dependent conductance $G(T)$ of this system.…
We review the mechanisms of low-temperature electron transport across a quantum dot weakly coupled to two conducting leads. Conduction in this case is controlled by the interaction between electrons. At temperatures moderately lower than…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the…