相关论文: Using a spin-triplet encoding to enhance shuttling…
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…
Fast and high fidelity shuttling of spin qubits has been demonstrated in semiconductor quantum dot devices. Several architectures based on shuttling have been proposed; it has been suggested that singlet-triplet (dual-spin) qubits could be…
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to model the nonadiabatic dynamics in regions of small valley…
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a…
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…
The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…
Shuttling of spin qubits between different locations is a key element in many prospective semiconductor systems for quantum information processing, but the shuttled qubits should be protected from decoherence created by time- and…
Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from…
Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…