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相关论文: Influence of strain on the anomalous Hall and Nern…

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We have studied the anomalous Hall effect (AHE) in strained thin films of the frustrated antiferromagnet Mn$_{3}$NiN. The AHE does not follow the conventional relationships with magnetization or longitudinal conductivity and is enhanced…

We conducted a comprehensive study on the compositional dependence of the anomalous Nernst effect (ANE) in amorphous (amo.) Tb-Fe-Co thin films. The anomalous Nernst coefficient strongly depends not only on the Tb composition but also on…

材料科学 · 物理学 2025-12-22 Hiroto Imaeda , Tsunehiro Takeuchi , Hiroyuki Awano , Kenji Tanabe

The intricate interplay between magnetism and the topology of electronic structures provides a rich avenue for tailoring materials with unique and potent anomalous transport properties. In this paper, we present a strategy for inducing…

材料科学 · 物理学 2024-12-04 Subhadip Pradhan , Kartik Samanta , Ashis K. Nandy

Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum…

材料科学 · 物理学 2026-05-07 Satoshi Okamoto , Adriana Moreo , Naoto Nagaosa , Stuart S. P. Parkin

Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…

The anomalous Nernst effect (ANE) is a member of the extensive family of topological effects in solid state physics. It converts a heat current into electric voltage and originates from the Berry curvature of electronic bands near the Fermi…

材料科学 · 物理学 2023-03-24 Ondřej Stejskal , Martin Veis , Jaroslav Hamrle

A series of thin films Fe$_{4-x}$Ge$_x$N (x=0-1) was fabricated onto MgO substrates by magnetron sputtering with the aim of studying the possible enhancement of the anomalous Nernst effect (ANE), envisaged based on Density Functional Theory…

Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in future electronic devices, but also because of the rich…

介观与纳米尺度物理 · 物理学 2023-06-19 Pingfan Gu , Yuxuan Peng , Shiqi Yang , Huan Wang , Shenyong Ye , Hanwen Wang , Yanping Li , Tianlong Xia , Jinbo Yang , Yu Ye

Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…

材料科学 · 物理学 2021-05-18 Shinji Isogami , Keisuke Masuda , Yoshio Miura , Rajamanickam Nagalingam , Yuya Sakuraba

The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…

材料科学 · 物理学 2019-05-06 Jisoo Moon , Jinwoong Kim , Nikesh Koirala , Maryam Salehi , David Vanderbilt , Seongshik Oh

The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic…

An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…

Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable…

We present a study of electric, thermal and thermoelectric response in noncollinear antiferromagnet Mn$_{3}$Sn, which hosts a large Anomalous Hall Effect (AHE). Berry curvature generates off-diagonal thermal(Righi-Leduc) and…

介观与纳米尺度物理 · 物理学 2017-08-09 Xiaokang Li , Liangcai Xu , Linchao Ding , Jinhua Wang , Mingsong Shen , Xiufang Lu , Zengwei Zhu , Kamran Behnia

Recent interest in topological nature in condensed matter physics has revealed the essential role of Berry curvature in anomalous Hall effect (AHE). However, since large Hall response originating from Berry curvature has been reported in…

强关联电子 · 物理学 2020-10-20 Kazuto Akiba , Kaisei Iwamoto , Takaaki Sato , Shingo Araki , Tatsuo C. Kobayashi

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction.…

介观与纳米尺度物理 · 物理学 2008-09-12 Yong Pu , Daichi Chiba , Fumihiro Matsukura , Hideo Ohno , Jing Shi

The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in non-collinear antiferromagnetic (AFM)…

材料科学 · 物理学 2019-04-25 Gautam Gurung , Ding-Fu Shao , Tula R. Paudel , Evgeny Y. Tsymbal

The discovery of the intrinsic anomalous Hall effect (AHE) in noncollinear antiferromagnets where transverse Hall voltage emerges without magnetic field, has opened a plethora of promising opportunities in antiferromagnetic devices. The key…

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with…

The anomalous Hall and Nernst effects describe the voltage drop perpendicular to an applied current and temperature gradient due to the magnetization of a magnetic material. These effects can be utilized to measure the Berry curvature at…

强关联电子 · 物理学 2024-02-01 Longfei Li , Shuyue Guan , Shengwei Chi , Jiawei Li , Xinxuan Lin , Gang Xu , Shuang Jia
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