相关论文: Development and Performance Study of Vertical GaN …
The presence of defects strongly influences semiconductor behavior. However, predicting the electronic properties of defective materials at finite temperatures remains computationally expensive even with density functional theory due to the…
We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk and at non-polar (10$\overline{1}$0) surface of wurtzite…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
Graphene photodetectors offer ultrafast response and broadband operation, but their responsivity is typically limited by rapid hot-carrier cooling, leading to a trade-off between sensitivity and speed. Here, we demonstrate that modifying…
Low Gain Avalanche Detectors(LGADs) is one of the candidate sensing technologies for future 4D-tracking applications and recently have been qualified to be used in the ATLAS and CMS timing detectors for the CERN High Luminosity Large Hadron…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
High bandwidth and low dark current germanium (Ge) photodetectors are crucial in silicon photonic integrated circuits. The bandwidth of Ge photodetectors is restricted by carrier transit time and parasitic parameters. And thermal generation…
Resistive plate chambers (RPC) lined with $^{10}B_{4}$C neutron converters is a promising cost effective technology for position-sensitive thermal neutron detection capable to outperform $^{3}$He-based detectors in terms of spatial…
Heterostructures comprising uncoated ZnO and coated with thin layers of Ga$_2$O$_3$ were produced using spin-coating and subsequent hydrothermal processing. X-ray diffraction examination verifies the structural integrity of the synthesized…
In an ideal germanium detector, fully-absorbed monoenergetic gamma-rays will appear in the measured spectrum as a narrow peak, broadened into a Gaussian of width determined only by the statistical properties of charge cloud generation and…
High resolution coherent nonlinear optical spectroscopy of an ensemble of red-emitting InGaN quantum dots in GaN nanowires is reported. The data show a pronounced atom-like interaction between resonant laser fields and quantum dot excitons…
Large number of Active Galactic Nuclei (AGN) producing Very-High-Energy (VHE) gamma-rays (energies above 100~GeV) has been revealed using observations with Imaging Atmospheric Cherenkov Telescopes (IACTs). However, our knowledge of the VHE…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
Large area Gas Electron Multiplier (GEM) detectors have been the preferred choice for tracking devices in major nuclear and particle physics experiments. Uniformity over surface of the detector in terms of gain, energy resolution and…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical…
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…
A CubeSat with a prototype scintillating detector with a sensitive volume of GAGG crystal is being developed with a possible launch date of 2025. Its purpose is to characterize the background signals that mimic the neutrino interaction that…
An important issue for rare-event-search experiments, such as the search for dark matter or neutrinoless double beta decay, is to reduce radioactivity of the detector materials and the experimental environment. The selection of materials…
A Rn-220 source is deployed on the XENON100 dark matter detector in order to address the challenges in calibration of tonne-scale liquid noble element detectors. We show that the Pb-212 beta emission can be used for low-energy electronic…