中文
相关论文

相关论文: Dielectric control of ultrafast carrier dynamics a…

200 篇论文

For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the…

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale…

介观与纳米尺度物理 · 物理学 2013-06-25 D. Brida , A. Tomadin , C. Manzoni , Y. J. Kim , A. Lombardo , S. Milana , R. R. Nair , K. S. Novoselov , A. C. Ferrari , G. Cerullo , M. Polini

While the Dirac band structure of graphene has established it as a leading platform for ultrafast optoelectronics, its non-perturbative nonlinear response under intense excitation remains poorly understood. Here, we report ultrafast…

光学 · 物理学 2026-04-27 Xiaolong Lv , Yu Zhang , Yuxuan Wei , Chuanshan Tian

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is…

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast…

For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing…

Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We…

Graphene has emerged as a promising material for integration into silicon photonics, owing to its ultrafast and broadband photoresponse without the need for an external bias voltage. This photoresponse relies on the photo-thermoelectric…

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the…

The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at…

介观与纳米尺度物理 · 物理学 2011-08-18 Dong Sun , Grant Aivazian , Aaron M. Jones , Wang Yao , David Cobden , Xiaodong Xu

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance,…

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional…

介观与纳米尺度物理 · 物理学 2021-05-19 Mathieu Massicotte , Giancarlo Soavi , Alessandro Principi , Klaas-Jan Tielrooij

Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging…

Long lifetimes of hot carriers can lead to qualitatively new types of responses in materials. The magnitude and time scales for these responses reflect the mechanisms governing energy flows. We examine the microscopics of two processes…

介观与纳米尺度物理 · 物理学 2015-04-06 Justin C. W. Song , Leonid S. Levitov

Understanding and controlling hot-carrier relaxation in graphene is crucial for advancing ultrafast optoelectronic and terahertz technologies. Here, we investigate carrier cooling dynamics in monolayer and bilayer graphene using…

介观与纳米尺度物理 · 物理学 2026-05-21 Sachin Sharm , Elliott Walker , Rachael Myers-Ward , Jenifer Hajzus , Yijing Liu , Paola Barbara , Ioannis Chatzakis

We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz…

材料科学 · 物理学 2015-06-23 J. N. Heyman , J. D. Stein , Z. S. Kaminski , A. R. Banman , A. M. Massari , J. T. Robinson

The temporal dynamics of charge carriers determines the speed with which electronics can be realized in condensed matter, and their direct manipulation with optical fields promises electronic processing at unprecedented petahertz…

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a…

介观与纳米尺度物理 · 物理学 2015-03-13 S. Das Sarma , Shaffique Adam , E. H. Hwang , Enrico Rossi

We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution.…

介观与纳米尺度物理 · 物理学 2015-03-17 Brian A. Ruzicka , Shuai Wang , Lalani K. Werake , Ben Weintrub , Kian Ping Loh , Hui Zhao

Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices,…

介观与纳米尺度物理 · 物理学 2017-01-19 Wei Lu , Shaofeng Ge , Xuefeng Liu , Hong Lu , Caizhen Li , Jiawei Lai , Chuan Zhao , Zhimin Liao , Shuang Jia , Dong Sun
‹ 上一页 1 2 3 10 下一页 ›