相关论文: A Unified Theory of Deterministic Magnetic Switchi…
Switching magnetism using only electricity is of great significance for industrial applications but remains challenging. We find that, altermagnetism, as a newly discovered unconventional magnetism, may open an avenue along this effort.…
Highly symmetric magnetic environments have been suggested to stabilize the magnetic information stored in magnetic adatoms on a surface. Utilized as memory devices such systems are subjected to electron tunneling and external magnetic…
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…
The general methodology of binary switching requires tilting of potential landscape along the desired direction of switching. The tilt generates a torque along the direction of switching and the degree of tilt should be sufficient enough to…
The orientation of the order parameter of quantum magnets can be used to store information in a dense and efficient way. Switching this order parameter corresponds to writing data. To understand how this can be done, we study a precessional…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…
Based on numerical simulations, we demonstrate thermally induced magnetic switching in synthetic ferrimagnets composed of multilayers of rare-earth and transition metals. Our findings show that deterministic magnetization reversal occurs…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
There has been much interest recently in the discovery of thermally induced magnetisation switching, where a ferrimagnetic system can be switched deterministically without and applied magnetic field. Experimental results suggest that the…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
Given the scarcity of experimentally confirmed magnetic structures, the reliable prediction of magnetic ground states is crucial; however, it remains a long-sought challenge because of the complex magnetic potential energy landscape. Here,…
We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…
Ferromagnetic rings exhibit many novel physical phenomena with promise for potential applications. Here, we focus on switching processes which are fundamental properties of magnetic systems and are especially crucial for data storage…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
We show that the magnetic moment of a composite multiferroic torsional oscillator can be switched by the electric field. The 180$^o$ switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the…
A new electronic structure principle, viz. the minimum magnetizability principle (MMP) has been proposed and also has been verified through ab initio calculations, to extend the domain of applicability of the conceptual density functional…