相关论文: Small-Data Machine Learning Uncovers Decoupled Con…
Rutile Germanium Dioxide (GeO2) has been recently theoretically identified as an ultrawide bandgap (UWBG) semiconductor with bandgap 4.68 eV similar to Ga2O3 but having bipolar dopability and ~2x higher electron mobility, Baliga figure of…
High-entropy alloys (HEAs), containing several metallic elements in near-equimolar proportions, have long been of interest for their unique mechanical properties. More recently, they have emerged as a promising platform for the development…
We introduce a reduced set of thermodynamic-topological observables for ordered multiscale dissipative systems. An interface-local quadratic reduction produces bounded integrity and residual channels, a flux-force stability channel, a…
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude…
Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…
Orthogonal circularly polarized light is essential for multiplexing tunable metasurfaces. Mainstream spin-decoupled metasurfaces, consisting of numerous meta-atoms with mirror symmetry, rely on the cooperative modulation of the…
Remote epitaxy on monolayer graphene is promising for synthesis of highly lattice mismatched materials, exfoliation of free-standing membranes, and re-use of expensive substrates. However, clear experimental evidence of a remote mechanism…
This paper reports FDTD simulations of optofluidic reconfiguration in two-dimensional silicon photonic crystal waveguides, treating structural plasticity (the creation and destruction of optical pathways) via selective fluid infiltration.…
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking…
$\mathrm{Ga}_{2}\mathrm{O}_{3}$ is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting $\mathrm{Ga}_{2}\mathrm{O}_{3}$…
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is…
The electrical and optical properties of semiconductor materials are profoundly influenced by the atomic configurations and concentrations of intrinsic defects. This influence is particularly significant in the case of $\beta$-$\rm…
In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4{\deg} vicinal sapphire substrates by metal…
The epitaxial growth of technically-important $\beta$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching…
Triply periodic minimal surface (TPMS) metamaterials characterized by mathematically-controlled topologies exhibit better mechanical properties compared to uniform structures. The unit cell topology of such metamaterials can be further…
Crystalline phase transitions in two-dimensional materials enable precise control over electronic and ferroic properties, making them attractive materials for memory and energy storage applications. In$_2$Se$_3$ is particularly promising…
I propose to use laser heating both for the substrate and the thermal evaporation sources in a vacuum chamber operating at pressures from XHV to values where the mean free path of the particles approaches or slightly exceeds the…
Control over crystallographic orientation in metal-organic framework (MOF) thin films is crucial for exploiting their anisotropic properties in sensing, catalysis, and separation. Achieving reproducible, highly oriented films remains…
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…
Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and…