相关论文: 3D tomography of exchange phase in a Si/SiGe quant…
We study three-electron-spin decoherence in a semiconductor triple quantum dot with a linear geometry. The three electron spins are coupled by exchange interactions J_{12} and J_{23}, and we clarify inhomogeneous and homogeneous dephasing…
We show that Heisenberg exchange interactions between the neighboring spins comprising an ensemble spin qubit (E-qubit) can act as an intrinsic error mitigator, increasing gate fidelity even at high temperatures. As an example, the fidelity…
Realizing the advantages of quantum computation requires access to the full Hilbert space of states of many quantum bits (qubits). Thus, large-scale quantum computation faces the challenge of efficiently generating entanglement between many…
Systems of correlated particles appear in many fields of science and represent some of the most intractable puzzles in nature. The computational challenge in these systems arises when interactions become comparable to other energy scales,…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
The effect of external electric field on the exchange interaction has been studied by an exact diagonalization method for two electrons in laterally coupled quantum dots (QD's). We have performed a systematic study of several nanodevices…
We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…
Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the properties of acceptor bound holes, where spin-orbit…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
We present a controlled method for computing the exchange coupling in strongly correlated one-dimensional electron systems. It is based on the asymptotically exact relation between the exchange constant and the pair-correlation function of…
We study the geometric phase accumulated during non-adiabatic charging of different driven open quantum systems serving as quantum battery models. We provide a full numerical analysis of dynamics under different type of noises typically…
We present numerical results of a model calculation for the 3He bilayer system, which captures the interplay between fast and slow dynamics of the different layers and incorporates an independent scale for the three body ring exchange. By…
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a…
We have studied the exchange-correlation hole and pair correlation function in the valence shell of the ground-state of the Si atom, using accurate Slater-Jastrow wavefunctions and the Variational Monte Carlo method. The…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
Developing a packaging scheme that meets all of the requirements for operation of solid-state qubits in a cryogenic environment can be a formidable challenge. In this article, we discuss work being done in our group as well as in the…
Low-frequency $1/f^\alpha$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities…
We consider a 2D electron system on a square lattice with hopping beyond nearest neighbors. The existence of the quantum critical point associated with an electronic topological transition in the noninteracting system results in density…