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相关论文: Influence of electrical properties on thermal boun…

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We theoretically study the properties of thermal conductance in a normal-insulator-superconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential…

介观与纳米尺度物理 · 物理学 2016-11-02 Ganesh C. Paul , Surajit Sarkar , Arijit Saha

At the nanoscale, the thermal boundary conductance (TBC) and thermal conductivity are not intrinsic properties of interfaces or materials but depend on the nearby environment. However, most studies focused on single interfaces or…

介观与纳米尺度物理 · 物理学 2024-05-08 Khalid Zobaid Adnan , Tianli Feng

We theoretically investigate the thermal boundary conductance across metal-nonmetal interfaces in the presence of the electron-phonon coupling not only in metal but also at interface. The thermal energy can be transferred from metal to…

材料科学 · 物理学 2016-02-11 Mengjie Li , Yuanyuan Wang , Jun Zhou , Jie Ren , Baowen Li

In this article, we report the influence of the interfacial roughness on the thermal boundary conductance between two crystals, using molecular dynamics. We show evidence of a transition between two regimes, depending on the interfacial…

材料科学 · 物理学 2015-06-23 Samy Merabia , Konstantinos Termentzidis

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results…

Thermoelectric conductance of Dirac materials and in particular zero modes reveals the effect of topology .Weyl semimetals with a boundary at z = 0 give rise to chiral zero modes with- out backscattering resulting in a significant…

介观与纳米尺度物理 · 物理学 2018-06-11 D. Schmeltzer

Heat transfer enhancement of N-Ga-Al semiconductor heterostructure interfaces is critical for the heat dissipation in GaN-based electronic devices, while the effect of the AlxGa(1-x)N transition layer component concentration and thickness…

材料科学 · 物理学 2024-10-14 Wenzhu Luo , Ershuai Yin , Lei Wang , Wenlei Lian , Neng Wang , Qiang Li

The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically…

材料科学 · 物理学 2015-04-07 Sridhar Sadasivam , Umesh V. Waghmare , Timothy S. Fisher

Thermal boundary conductance at a metal-dieletric interface is a quantity of prime importance for heat management at the nanoscale. While the boundary conductance is usually ascribed to the coupling between metal phonons and dielectric…

介观与纳米尺度物理 · 物理学 2015-06-23 J. Lombard , F. Detcheverry , S. Merabia

Despite the importance of high thermal conductance (i.e. low thermal resistance) of metal contacts to thermal management of graphene devices, prior reported thermal conductance of metal/graphene interfaces are all relatively low, only 20-40…

介观与纳米尺度物理 · 物理学 2017-05-17 Bin Huang , Yee Kan Koh

GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device…

Varying the thermal boundary conductance at metal-dielectric interfaces is of great importance for highly integrated electronic structures such as electronic, thermoelectric and plasmonic devices where heat dissipation is dominated by…

应用物理 · 物理学 2020-12-08 S. M. Oommen , S. Pisana

The presence of interfaces in semiconductor devices substantially hinders thermal transport, contributing disproportionately to the overall thermal resistance. However, approaches to enhance interfacial thermal transport remain scarce…

介观与纳米尺度物理 · 物理学 2025-11-18 Yizhe Liu , Bo Sun

The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is…

Controlling heat flow by phononic nanodevices has received significant attention recently because of its fundamental and practical implications. Elementary phononic devices such as thermal rectifiers, transistors, and logic gates are…

介观与纳米尺度物理 · 物理学 2013-07-29 Jie Ren , Jian-Xin Zhu

Research on conjugated polymers for thermoelectric applications has made tremendous progress in recent years, which is accompanied by surging interest in molecular doping as a means to achieve the high electrical conductivities that are…

The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…

材料科学 · 物理学 2007-05-23 A. Ya. Shul'man , N. A. Mordovets , I. N. Kotel'nikov
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