相关论文: Flash annealing-engineered wafer-scale relaxor ant…
Relaxor ferroelectric thin films are recognized for their ultrahigh power density, rendering them highly promising for energy storage applications in electrical and electronic systems. However, achieving high energy storage performance with…
Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and…
We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on…
Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 {\deg}C) is…
An atomistic first-principles-based effective Hamiltonian is used to investigate energy storage in Ba(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ relaxor ferroelectrics, both in their bulk and epitaxial films' forms, for electric fields applied along…
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…
Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the…
Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones…
Lead-free dielectric thin-film capacitors with desirable energy storage density are gathering attention due to the increasing environmental concern and the integrating electronic devices. We here reported a series of new highly-orientated…
In this work, the effects of thermal annealing at 500 {\deg}C on aerosol-deposited $0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}$ thick films on stainless-steel substrates are investigated using two…
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these…
Electrical energy storage systems (EESSs) with high energy density and power density are essential for the effective miniaturization of future electronic devices. Among different EESSs available in the market, dielectric capacitors relying…
In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick…
Dielectric capacitors are critical components in electronics and energy storage devices. The polymer based dielectric capacitors have advantages of flexibility, fast charge and discharge, low loss, and graceful failure. Elevating the use of…
The large electrocaloric coupling in PbZrO3 allows using high-speed infrared imaging to visualize antiferroelectric switching dynamics via the associated temperature change. We find that in ceramic samples of homogeneous temperature and…
The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high…
The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in pulsed-power technologies. However,…
Electric capacitors are commonly used in electronic circuits for short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately,…
Ba0.85Ca0.15Zr0.1Ti0.9O3/La0.8Sr0.2MnO3/Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT/LSMO/BCZT) sandwich films were elaborated using the sol-gel spin coating process. The dielectric properties displayed excellent thermal stability with the temperature…
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often…