相关论文: Current-induced magnetization control in dipolar-c…
Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic…
Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
Several recent experimental studies have confirmed the possibility of switching the magnetization direction in the small magnetic domains by pumping large spin-polarized currents through them. On the basis of equations proposed by…
Artificial spin ice systems are metamaterials composed of interacting nanomagnets arranged on a lattice, exhibiting geometrical frustration and emergent phenomena such as monopole excitations. We explore magnetization dynamics and monopole…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
We propose to use oscillating spin currents with slowly varying frequency (chirp) to manipulate and control the magnetization dynamics in a nanomagnet. By recasting the Landau-Lifshitz-Slonczewski equation in a quantum-like two-level…
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
Artificial spin-ice systems, consisting of arrays of interacting ferromagnetic nanoelements, offer a versatile platform for reconfigurable magnonics with potential in GHz logic and neuromorphic computing. However, weak dipolar coupling…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…
Spin-orbit torques (SOTs) generated in SOT-material/ferromagnet structures are classified as damping-like (DL) and field-like (FL) torques for current-driven magnetization switching. It is well known that both DL- and FL-SOTs originate from…
Continuous switching driven by spin-orbit torque (SOT) is preferred to realize neuromorphic computing in a spintronic manner. Here we have applied focused ion beam (FIB) to selectively illuminate patterned regions in a Pt/Co/MgO strip with…
While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger…
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…
This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a…