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Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many…

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold…

Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior, and rectify currents of…

材料科学 · 物理学 2009-11-13 Enrique Cobas , Michael S. Fuhrer

The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…

介观与纳米尺度物理 · 物理学 2021-10-12 Sikandar Aftab , Ms. Samiya , Muhammad Waqas Iqbal , Fahmid Kabir , Muhammad Zahir Iqbal , M. Arslan Shehzad

Superconducting thin-film electronics are attractive for their low power consumption, fast operating speeds, and ease of interface with cryogenic systems such as single-photon detector arrays, and quantum computing devices. However, the…

The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has…

Thermal diode is a growing technology and important for active thermal flow control. Since the theoretical designing of thermal diode in 2004, various kinds of solid-state thermal diodes have been theoretically and experimentally…

超导电性 · 物理学 2025-10-02 Poonam Rani , Masayuki Mashiko , Keisuke Hirata , Ken-ichi Uchida , Yoshikazu Mizuguchi

Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we…

介观与纳米尺度物理 · 物理学 2015-04-15 Hua-Min Li , Daeyeong Lee , Deshun Qu , Xiaochi Liu , Jungjin Ryu , Alan Seabaugh , Won Jong Yoo

$\beta$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the…

应用物理 · 物理学 2025-03-31 Hunter D. Ellis , Botong Li , Haoyu Xie , Jichao Fan , Imteaz Rahaman , Weilu Gao , Kai Fu

Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…

The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…

介观与纳米尺度物理 · 物理学 2014-06-24 Surajit Sutar , Pratik Agnihotri , Everett Comfort , T. Taniguchi , K. Watanabe , Ji Ung Lee

Electrical current rectification is an interesting electronic feature, popularly known as a diode. Achieving a high rectification ratio in a molecular junction has been a long-standing goal in molecular electronics. The present work…

Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…

${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…

Colloidal materials of tin(II) sulfide (SnS), as a layered semiconductor with a narrow band gap, are emerging as a potential alternative to the more toxic metal chalcogenides (PbS, PbSe, CdS, CdSe) for various applications such as…

Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…

Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel…

Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential…

介观与纳米尺度物理 · 物理学 2017-04-05 Farzan Gity , Lida Ansari , Martin Lanius , Peter Schüffelgen , Gregor Mussler , Detlev Grützmacher , James C. Greer

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…

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