相关论文: Spin Fluctuations-induced Unconventional Transvers…
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
A vital goal in spintronics is the efficient electrical generation of spin currents, a pursuit that has recently focused on using antiferromagnets (AFMs) as spin current sources. It has been demonstrated that antiferromagnets with broken PT…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…
Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
Owing to their high magnon frequencies, antiferromagnets are key materials for future high-speed spintronics. Picosecond switching of antiferromagnetic order has been viewed a milestone for decades and pursued only by using ultrafast…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
We consider an antiferromagnetic insulator that is in contact with a metal. Spin accumulation in the metal can induce spin-transfer torques on the staggered field and on the magnetization in the antiferromagnet. These torques relate to spin…
In the framework of phenomenological model we consider dynamics of a compensated collinear antiferromagnet (AFM) in the presence of spin-polarised current. The model is based on the assumption that AFM spins are localised and spin torque is…
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…