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Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for…

Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and $\beta$' phases, respectively. In this work, we utilise angle-resolved photoelectron…

Crystalline phase transitions in two-dimensional materials enable precise control over electronic and ferroic properties, making them attractive materials for memory and energy storage applications. In$_2$Se$_3$ is particularly promising…

材料科学 · 物理学 2026-03-03 Joseph L. Spellberg , Lina Kodaimati , Atreyie Ghosh , Prakriti P. Joshi , Sarah B. King

Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer…

The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more…

As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional…

材料科学 · 物理学 2026-02-05 Seunguk Song , Michael Altvater , Wonchan Lee , Hyeon Suk Shin , Nicholas Glavin , Deep Jariwala

The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner…

材料科学 · 物理学 2023-12-22 Guoliang Yu , Shengxian Li , Anlian Pan , Mingxing Chen , Zhenyu Zhang

A crystalline solid is a periodic sequence of identical cells, each containing one or more atoms. If the constituting unit cell is not centrosymmetric, charge may distribute unevenly between the atoms, resulting in internal electric…

Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical…

材料科学 · 物理学 2018-10-15 Siyuan Wan , Yue Li , Wei Li , Xiaoyu Mao , Wenguang Zhu , Hualing Zeng

Inorganic semiconductor materials are integral to various modern technologies, yet their brittleness and limited deformability/processability pose a significant challenge in the development of flexible, wearable, and miniaturized…

材料科学 · 物理学 2023-12-12 Yandong Sun , Yupeng Ma , Jin-yu Zhang , Tian-Ran Wei , Xun Shi , David Rodney , Ben Xu

Light-induced sliding ferroelectricity in two-dimensional van der Waals materials enables polarization control via relative layer motion. However, polarization switching occurs on the time scale of shear modes (tens of ps) and requires very…

材料科学 · 物理学 2026-05-26 Xiangzhou Zhu , Stefano Mocatti , Matteo Calandra

Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here,…

Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…

材料科学 · 物理学 2024-02-29 Liyi Bai , Changming Ke , Zhongshen Luo , Tianyuan Zhu , Lu You , Shi Liu

Inversion symmetry breaking is critical for many quantum effects and fundamental for spin-orbit torque, which is crucial for next-generation spintronics. Recently, a novel type of gigantic intrinsic spin-orbit torque has been established in…

材料科学 · 物理学 2025-01-09 Kai-Xuan Zhang , Hwiin Ju , Hyuncheol Kim , Jingyuan Cui , Jihoon Keum , Je-Geun Park , Jong Seok Lee

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer…

材料科学 · 物理学 2020-04-29 Yuanhui Sun , Yawen Li , Tianshu Li , Koushik Biswas , Amalia Patanè , Lijun Zhang

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides…

The combination of metallicity and ferroelectricity breaks traditional boundaries, paving new avenues for innovative electronic materials and devices. This breakthrough is particularly notable, as metallicity and ferroelectricity have…

材料科学 · 物理学 2024-04-09 Jiagang Zhang , Ting Zhang

We report the discovery of a temperature induced phase transition between the \alpha and \beta structures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of \alpha-antimonene having…

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic…

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