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相关论文: Phonon-assisted photoluminescence of bilayer MoS$_…

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Phonon-assisted photoluminescence (PL) in molybdenum-based two-dimensional dichalcogenides is typically weak due to the dormant phonon coupling with optically inactive momentum-dark (intervalley) excitons, unlike in tungsten-based…

材料科学 · 物理学 2025-04-01 Rishabh Saraswat , Rekha Verma , Sitangshu Bhattacharya

We develop a first-principles theory of phonon-assisted optical absorption in semiconductors and insulators which incorporates the temperature dependence of the electronic structure. We show that the Hall-Bardeen-Blatt theory of indirect…

材料科学 · 物理学 2015-10-22 Marios Zacharias , Christopher E. Patrick , Feliciano Giustino

Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties…

材料科学 · 物理学 2022-09-27 Yueyang Yu , Chuan-Ding Dong , Rolf Binder , Stefan Schumacher , Cun-Zheng Ning

In the present work, Raman and photoluminescence spectroscopies were used to study the dynamics of phonons and different excitons of MoS$_2$ bilayer under a rotation of 29$^{\circ}$ dependent of the temperature. The twisted bilayer (T-2L)…

The coupling of atomic vibrations to electronic excitations - traditionally understood to be a source of energy loss in semiconductors - has recently been explored in photosynthetic light harvesting as a means to circumvent dissipation by…

材料科学 · 物理学 2026-02-04 Yifan Liu , Robert Dawson , Nathaniel Gabor , Vivek Aji

The phonon-assisted interband optical absorption spectrum of silicon is calculated at the quasiparticle level entirely from first principles. We make use of the Wannier interpolation formalism to determine the quasiparticle energies, as…

Transition metal dichalcogenides (TMDs) is a promising platform for new generation optoelectronics and nanophotonics due to their unique optical properties. However, in contrast to direct bandgap TMDs monolayers, bulk samples have an…

Many recent experiments investigated potential and attractive means of modifying many-body interactions in two-dimensional materials through time-resolved spectroscopy techniques. However, the role of ultrafast phonon-assisted processes in…

材料科学 · 物理学 2020-01-28 Dino Novko , Marko Kralj

Excitons in twisted bilayers of transition metal dichalcogenides have strongly modified dispersion relations due to the formation of periodic moir\'e potentials. The strong coupling to a light field in an optical cavity leads to the…

介观与纳米尺度物理 · 物理学 2024-06-11 Kevin Jürgens , Daniel Wigger , Tilmann Kuhn

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the…

We report planar tunneling spectroscopy measurements on metal-WSe$_2$-twisted bilayer graphene heterostructures across a broad range of gate and bias voltages. The observed experimental features are attributed to phonon-assisted tunneling…

We present a new paradigm for understanding optical absorption and hot electron dynamics experiments in graphene. Our analysis pivots on assigning proper importance to phonon assisted indirect processes and bleaching of direct processes. We…

材料科学 · 物理学 2017-11-22 Yuan Yang , Grigory Kolesov , Lucas Kocia , Eric J. Heller

We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high…

We present a comprehensive optical study of thin films of tungsten disulfide (WS$_2$) with layer thicknesses ranging from mono- to octalayer and in the bulk limit. It is shown that the optical band-gap absorption of monolayer WS$_2$ is…

介观与纳米尺度物理 · 物理学 2017-09-19 Maciej R. Molas , Karol Nogajewski , Artur O. Slobodeniuk , Johannes Binder , Miroslav Bartos , Marek Potemski

Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…

介观与纳米尺度物理 · 物理学 2016-06-06 Alejandro Molina-Sánchez , Maurizia Palummo , Andrea Marini , Ludger Wirtz

Probing phonons, quasi-particle excitations and their coupling has enriched our understanding of these 2D materials and proved to be crucial for developing their potential applications. Here, we report comprehensive temperature, 4-330 K,…

材料科学 · 物理学 2022-03-14 Deepu Kumar , Vivek Kumar , Rahul Kumar , Mahesh Kumar , Pradeep Kumar

We examined the temperature (T) evolution of the optical conductivity spectra of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy features…

强关联电子 · 物理学 2015-06-18 H. J. Park , C. H. Sohn , D. W. Jeong , G. Cao , K. W. Kim , S. J. Moon , Hosub Jin , Deok-Yong Cho , T. W. Noh

Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in-situ electron beam lithography combined with a low-temperature…

Raman spectra obtained by the inelastic scattering of light by crystalline solids contain contributions from first-order vibrational processes (e.g. the emission or absorption of one phonon, a quantum of vibration) as well as higher-order…

材料科学 · 物理学 2017-08-22 Yannick Gillet , Stefan Kontur , Matteo Giantomassi , Claudia Draxl , Xavier Gonze

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…

介观与纳米尺度物理 · 物理学 2023-04-12 Xiao Zhang , Emmanouil Kioupakis
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